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In this paper we present a reliable process to fabricate GaN/AlGaN one dimensional photonic crystal (1D-PhC) microcavities with nonlinear optical properties. We used a heterostructure with a GaN layer embedded between two Distributed Bragg Reflectors consisting of AlGaN/GaN multilayers, on sapphire substrate, designed to generate a {\lambda}= 800 nm frequency down-converted signal (\chi^(2) effect) from an incident pump signal at {\lambda}= 400 nm. The heterostructure was epitaxially grown by metal organic chemical vapour deposition (MOCVD) and integrates a properly designed 1D-PhC grating, which amplifies the signal by exploiting the double effect of cavity resonance and non linear GaN enhancement. The integrated 1D-PhC microcavity was fabricate combing a high resolution e-beam writing with a deep etching technique. For the pattern transfer we used ~ 170 nm layer Cr metal etch mask obtained by means of high quality lift-off technique based on the use of bi-layer resist (PMMA/MMA). At the same time, plasma conditions have been optimized in order to achieve deeply etched structures (depth over 1 micron) with a good verticality of the sidewalls (very close to 90{\deg}). Gratings with well controlled sizes (periods of 150 nm, 230 nm and 400 nm respectively) were achieved after the pattern is transferred to the GaN/AlGaN heterostructure., Comment: presented at Photonics Europe -SPIE 2010

We present a study on the design, growth and optical characterization of a GaN/AlGaN microcavity for the enhancement of second order non linear effects. The proposed system exploits the high second order nonlinear optical response of GaN due to the non centrosymmetric crystalline structure of this material. It consists of a GaN cavity embedded between two GaN/AlGaN Distributed Bragg Reflectors designed for a reference mode coincident with a second harmonic field generated in the near UV region (~ 400 nm). Critical issues for this target are the crystalline quality of the material, together with sharp and abrupt interfaces among the multi-stacked layers. A detailed investigation on the growth evolution of GaN and AlGaN epilayers in such a configuration is reported, with the aim to obtain high quality factor in the desiderated spectral range. Non linear second harmonic generation experiments have been performed and the results were compared with bulk GaN sample, highlighting the effect of the microcavity on the non linear optical response of this material.

We present a scheme of XOR/XNOR logic gate, based on non phase-matched noncollinear second harmonic generation from a medium of suitable crystalline symmetry, Gallium nitride. The polarization of the noncollinear generated beam is a function of the polarization of both pump beams, thus we experimentally investigated all possible polarization combinations, evidencing that only some of them are allowed and that the nonlinear interaction of optical signals behaves as a polarization based XOR. The experimental results show the peculiarity of the nonlinear optical response associated with noncollinear excitation, and are explained using the expression for the effective second order optical nonlinearity in noncollinear scheme.

We present a method, based on noncollinear second harmonic generation, to evaluate the non-zero elements of the nonlinear optical susceptibility. At a fixed incidence angle, the generated signal is investigated by varying the polarization state of both fundamental beams. The resulting polarization charts allows to verify if Kleinman symmetry rules can be applied to a given material or to retrieve the absolute value of the nonlinear optical tensor terms, from a reference measurement. Experimental measurements obtained from Gallium Nitride layers are reported. The proposed method does not require an angular scan thus is useful when the generated signal is strongly affected by sample rotation, Comment: To appear on Opt. Lett