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Two-dimensional materials, including transition metal dichalcogenides, are attractive for a variety of applications in electronics as well as photonics and have recently been envisioned as an appealing platform for phonon polaritonics. However, their direct characterization in the terahertz spectral region, of interest for retrieving, e.g., their phonon response, represents a major challenge, due to the limited sensitivity of typical terahertz spectroscopic tools and the weak interaction of such long-wavelength radiation with sub-nanometer systems. In this work, by exploiting an ad-hoc engineered metallic surface enabling a ten-thousand-fold local absorption boost, we perform enhanced terahertz spectroscopy of a monolayer transition metal dichalcogenide (tungsten diselenide) and extract its dipole-active phonon resonance features. In addition, we use these data to obtain the monolayer effective permittivity around its phonon resonance. Via the direct terahertz characterization of the phonon response of such two-dimensional systems, this method opens the path to the rational design of phonon polariton devices exploiting monolayer transition metal dichalcogenides.

Brain-inspired computing and neuromorphic hardware are promising approaches that offer great potential to overcome limitations faced by current computing paradigms based on traditional von-Neumann architecture. In this regard, interest in developing memristor crossbar arrays has increased due to their ability to natively perform in-memory computing and fundamental synaptic operations required for neural network implementation. For optimal efficiency, crossbar-based circuits need to be compatible with fabrication processes and materials of industrial CMOS technologies. Herein, we report a complete CMOS-compatible fabrication process of TiO2-based passive memristor crossbars with 700 nm wide electrodes. We show successful bottom electrode fabrication by a damascene process, resulting in an optimised topography and a surface roughness as low as 1.1 nm. DC sweeps and voltage pulse programming yield statistical results related to synaptic-like multilevel switching. Both cycle-to-cycle and device-to-device variability are investigated. Analogue programming of the conductance using sequences of 200 ns voltage pulses suggest that the fabricated memories have a multilevel capacity of at least 3 bits due to the cycle-to-cycle reproducibility., Comment: 18 pages, 4 figures in main text, 5 figures in SI

Controlling functionalities, such as magnetism or ferroelectricity, by means of oxygen vacancies (VO) is a key issue for the future development of transition metal oxides. Progress in this field is currently addressed through VO variations and their impact on mainly one order parameter. Here we reveal a new mechanism for tuning both magnetism and ferroelectricity simultaneously by using VO. Combined experimental and density-functional theory studies of Eu0.5Ba0.5TiO3-{\delta}, we demonstrate that oxygen vacancies create Ti3+ 3d1 defect states, mediating the ferromagnetic coupling between the localized Eu 4f7 spins, and increase an off-center displacement of Ti ions, enhancing the ferroelectric Curie temperature. The dual function of Ti sites also promises a magnetoelectric coupling in the Eu0.5Ba0.5TiO3-{\delta}., Comment: Accepted by Physical Review B, 2017