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We show that laser wakefield electron accelerators in meter-scale, low density hydrodynamic plasma waveguides operate in a new nonlinear propagation regime where sustained beating of lowest order modes of the ponderomotively modified channel plays a significant role, whether or not the injected pulse is linearly matched to the guide. For a continuously doped gas jet, this mode beating effect leads to ionization injection and a striated multi-GeV energy spectrum of multiple quasi-monoenergetic peaks; the same process in a locally doped jet produces single multi-GeV peaks with <10% energy spread. A 3-stage model of drive laser pulse evolution and ionization injection characterizes the beating effect and explains our experimental results.

We present the first demonstration of multi-GeV laser wakefield acceleration in a fully optically formed plasma waveguide, with an acceleration gradient as high as 25 GeV/m. The guide was formed via self-waveguiding of <15 J, 45 fs (<~300 TW) pulses over 20 cm in a low density hydrogen gas jet, with accelerated electron bunches simultaneously driven up to 5 GeV in a milliradian divergence quasi-monoenergetic peak of relative energy width ~15% and charge of at least ~10 picocoulombs. Energy gain is inversely correlated with on-axis waveguide density in the range N_e0=(1.3-3.2)x10^17 cm^(-3). We find that shot-to-shot stability of bunch spectra and charge are strongly dependent on the pointing of the injected laser pulse and gas jet uniformity. We also observe evidence of pump depletion-induced dephasing, a consequence of the long optical guiding distance.

Intense lasers can accelerate electrons to very high energy over a short distance. Such compact accelerators have several potential applications including fast ignition, high energy physics, and radiography. Among the various schemes of laser-based electron acceleration, vacuum laser acceleration has the merits of super-high acceleration gradient and great simplicity. Yet its realization has been difficult because injecting free electrons into the fast-oscillating laser field is not trivial. Here we demonstrate free-electron injection and subsequent vacuum laser acceleration of electrons up to 20 MeV using the relativistic transparency effect. When a high-contrast intense laser drives a thin solid foil, electrons from the dense opaque plasma are first accelerated to near-light speed by the standing laser wave in front of the solid foil and subsequently injected into the transmitted laser field as the opaque plasma becomes relativistically transparent. It is possible to further optimize the electron injection/acceleration by manipulating the laser polarization, incident angle, and temporal pulse shaping. Our result also sheds new light on the fundamental relativistic transparency process, crucial for producing secondary particle and light sources., Comment: 18 pages, 7 figures

We present picosecond-resolution streaked K-shell spectra from 400 nm-diameter nickel nanowire arrays, demonstrating the ability to generate large volumes of high energy density plasma when combined with the longer pulses typical of the largest short pulse lasers. After irradiating the wire array with 100 J, 600 fs ultra-high-contrast laser pulses focussed to $>10^{20}$ W/cm$^{2}$ at the Orion laser facility, we combine atomic kinetics modeling of the streaked spectra with 2D collisional particle-in-cell simulations to describe the evolution of material conditions within these samples for the first time. We observe a three-fold enhancement of helium-like emission compared to a flat foil in a near-solid-density plasma sustaining keV temperatures for tens of picoseconds, the result of strong electric return currents heating the wires and causing them to explode and collide., Comment: 5 pages, 5 figures

An overview from the past and an outlook for the future of fundamental laser-plasma interactions research enabled by emerging laser systems.

The electron beam assisted chemical vapor deposition (EBCVD) of silicon nitride films using NH3, N2, and SiH4 as the reactant gases is reported. The films have been deposited on aluminum, SiO2, and polysilicon film substrates as well as on crystalline silicon substrates. The range of experimental conditions under which silicon nitrides have been deposited includes substrate temperatures from 50 to 400 C, electron beam currents of 2-40 mA, electron beam energies of 1-5 keV, total ambient pressures of 0.1-0.4 Torr, and NH3/SiH4 mass flow ratios of 1-80. The physical, electrical, and chemical properties of the EBCVD films are discussed.