1. Anisotropic transverse magnetoresistance temperature dependence in Mn3Ga Weyl semimetal with chiral anomaly
- Author
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Cota-Martínez, I. M., Antón, R. López, Garay-Tapia, A. M., Matutes-Aquino, J. A., Santillán-Rodríguez, C. R., Saénz-Hernández, R. J., Gutiérrez-Pérez, R. M., Holguín-Momaca, J. T., Ross, C. A., and Olive-Méndez, Sion F.
- Subjects
Condensed Matter - Materials Science - Abstract
Hexagonal antiferromagnetic D019-Mn3X (X = Sn, Ge, Ga) compounds, with a non-collinear Kagome spin structure, are Weyl semimetals exhibiting novel topological transport properties. The longitudinal magnetoresistance of c-oriented epitaxial Ru/Mn3Ga thin films exhibits a positive quadratic dependence on magnetic field over a wide range of temperatures. Here we describe the transverse magnetoresistance, with the field in the out-of-plane direction, for c-oriented epitaxial GaN (0001)/Mn3Ga films. There is a transition from a negative linear to a positive quadratic dependence on magnetic field in the temperature range from 200 K to 300 K. The electrical resistivity shows a metallic to semiconductor transition at 230 K. By applying the electric field along two perpendicular in-plane directions we find asymmetry in the magnetoresistance curves due to self-spin polarized currents created through magnetic octupole clusters. First principles calculations confirmed the metallic to semiconductor transition corresponds to reordering the spin structure to a higher symmetry configuration., Comment: 16 pages, 4 figures, to be submitted to Nano Letters
- Published
- 2024