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The interference gating is a novel method for robust time-resolved electron holographic measurements by directly switching the interference. Here, a new arrangement is presented in which a biprism in the condenser aperture as a fast electric phase shifter is used to control the interference pattern. High-frequency stimulation of the electric phase shifter in the gigahertz range are performed and observed via electron holography, proving the feasibility of interference gating in the upper picosecond range. Despite the bandwidth limitation of 180~MHz of the current signal generator, a time resolution of 100 nanoseconds is achieved through forward correction of the control signal. With this time resolution, it is already possible to measure the transient response of the biasing holder system. Our method paves the way towards a closer look on fast dynamic processes with high temporal and spatial resolution.

Complex 3D magnetic textures in nanomagnets exhibit rich physical properties, for example in their dynamic interaction with external fields and currents, and play an increasing role for current technological challenges such as energy-efficient memory devices. To study these magnetic nanostructures including their dependency on geometry, composition and crystallinity, a 3D characterization of the magnetic field with nanometer spatial resolution is indispensable. Here we show how holographic vector field electron tomography can reconstruct all three components of magnetic induction as well as the electrostatic potential of a Co/Cu nanowire with sub 10\,nm spatial resolution. We address the workflow from acquisition, via image alignment to holographic and tomographic reconstruction. Combining the obtained tomographic data with micromagnetic considerations we derive local key magnetic characteristics, such as magnetization current or exchange stiffness, and demonstrate how magnetization configurations, such as vortex states in the Co-disks, depend on small structural variations of the as-grown nanowire., Comment: 10 pages, 4 figures

The non-destructive characterization of nanoscale devices, such as those based on semiconductor nanowires, in terms of functional potentials is crucial for correlating device properties with their morphological/materials features, as well as for precisely tuning and optimizing their growth process. Electron holographic tomography (EHT) has been used in the past to reconstruct the total potential distribution in 3D but hitherto lacked a quantitative approach to separate potential variations due to chemical composition changes (mean inner potential - MIP) and space charges. In this letter, we combine and correlate EHT and high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) tomography on an individual <111> oriented GaAs-AlGaAs core-multishell nanowire (NW). We obtain excellent agreement between both methods in terms of the determined Al concentration within the AlGaAs shell, as well as thickness variations of the few nanometer thin GaAs shell acting as quantum well tube. Subtracting the MIP determined from the STEM tomogram, enables us to observe functional potentials at the NW surfaces and at the Au-NW interface, both ascribed to surface/interface pinning of the semiconductor Fermi level.

We present a method to prepare magnetic spin torque devices of low specific resistance in a one step lithography process. The quality of the pillar devices is demonstrated for a standard magnetic double layer device. For single layer devices, we found hysteretic switching and a more complex dynamical excitation pattern in higher fields. A simple model to explain the resistance spikes is presented., Comment: 22 pages, 6 figures, submitted to J. Appl. Phys