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The low energy muon spin rotation spectroscopy (LE-$\mu$SR) is primarily used to investigate thin films, surfaces, and interfaces of materials, which has matured at the Paul Scherrer Institute (PSI) and is routinely employed by users of the low energy muon (LEM) facility. However, because of the large beam spot and low implanted muons rate, LE-$\mu$SR measurements on small samples are difficult, requiring an optimal sample size of $25\times25$ mm$^2$. Recently, we have boosted our ability to measure small samples, down to $5\times5$ mm$^2$ area, by beam collimation and tuning. This achievement is crucial for the measurements of many magnetic and superconducting materials. Furthermore, we have devised a method that allows us to measure five small area samples mounted together on the same sample plate. We expect this method to further improve the efficient use of beam time at LEM.

Muons are puzzling physicists since their discovery when they were first thought to be the meson predicted by Yukawa to mediate the strong force. The recent results at Fermilab on the muon g-2 anomaly puts the muonic sector once more under the spotlight and calls for new measurements with this fascinating particle. Here we present the results of the first measurement of the $2S_{1/2},F$=$0 \rightarrow 2P_{1/2},F$=$1$ transition in Muonium, the hydrogen-like bound state of a positive muon and an electron. The measured value of 580.6 $\pm$6.8 MHz is in agreement with the theoretical calculations. From this measurement a value of the Lamb shift of 1045.5 $\pm$6.8 MHz is extracted, compatible with previous experiments. We also determine for the first time the $2S$ hyperfine splitting in Muonium to be 559.6$\pm$7.2 MHz. The measured transition being isolated from the other hyperfine levels holds the promise to provide an improved determination of the Muonium Lamb shift at a level where bound state QED recoil corrections not accessible in hydrogen could be tested. Such a measurement will also be sensitive to new physics in the muonic sector, e.g. to new bosons which might provide an explanation of the g-2 muon anomaly or Lorentz and CPT violation. We also present the first observation of Muonium in the $n = 3$ excited state opening up the possibility of new precise microwave measurements as realized in hydrogen., Comment: 6 pages, 5 Figs

Imaging devices made from an ionization target layer of amorphous selenium (aSe) coupled to a silicon complementary metal-oxide-semiconductor (CMOS) active pixel array for charge readout are a promising technology for neutrino physics. The high spatial resolution in a solid-state target provides unparalleled rejection of backgrounds from natural radioactivity in the search for neutrinoless $\beta\beta$ decay and for electron neutrino ($\nu_e$) spectroscopy with $^{82}$Se. In this white paper, we summarize the broad scientific program of a large imaging detector with a 10-ton target of $^{82}$Se. We review the detector technology, and outline the ongoing research program to realize this experiment., Comment: Contribution to Snowmass 2021

We report a new measurement of the $n=2$ Lamb shift in Muonium using microwave spectroscopy. Our result of $1047.2(2.3)_\textrm{stat}(1.1)_\textrm{syst}$ MHz comprises an order of magnitude improvement upon the previous best measurement. This value matches the theoretical calculation within one standard deviation allowing us to set limits on CPT violation in the muonic sector, as well as on new physics coupled to muons and electrons which could provide an explanation of the muon $g-2$ anomaly., Comment: 6 pages, 4 figures

Precision spectroscopy of the Muonium Lamb shift and fine structure requires a robust source of 2S Muonium. To date, the beam-foil technique is the only demonstrated method for creating such a beam in vacuum. Previous experiments using this technique were statistics limited, and new measurements would benefit tremendously from the efficient 2S production at a low energy muon ($<20$ keV) facility. Such a source of abundant low energy $\mathrm{\mu^+}$ has only become available in recent years, e.g. at the Low-Energy Muon beamline at the Paul Scherrer Institute. Using this source, we report on the successful creation of an intense, directed beam of metastable Muonium. We find that even though the theoretical Muonium fraction is maximal in the low energy range of $2-5$ keV, scattering by the foil and transport characteristics of the beamline favor slightly higher $\mathrm{\mu^+}$ energies of $7-10$ keV. We estimate that an event detection rate of a few events per second for a future Lamb shift measurement is feasible, enabling an increase in precision by two orders of magnitude over previous determinations.

A new class of phenomena stemming from topological states of quantum matter has recently found a variety of analogies in classical systems. Spin-locking and one-way propagation have been shown to drastically alter our view on scattering of electromagnetic waves, thus offering an unprecedented robustness to defects and disorder. Despite these successes, bringing these new ideas to practical grounds meets a number of serious limitations. In photonics, when it is crucial to implement topological photonic devices on a chip, two major challenges are associated with electromagnetic dissipation into heat and out-of-plane radiation into free space. Both these mechanisms may destroy the topological state and seriously affect the device performance. Here we experimentally demonstrate that the topological order for light can be implemented in all-dielectric on-chip prototype metasurfaces, which mitigate the effect of Ohmic losses by using exclusively dielectric materials, and reveal that coupling of the system to the radiative continuum does not affect the topological properties. Spin-Hall effect of light for spin-polarized topological edge states is revealed through near-field spectroscopy measurements., Comment: 12 pages, 5 figures

We study the feasibility of implementing a quantum NOT gate (approximate) when the quantum state lies between two latitudes on the Bloch's sphere and present an analytical formula for the optimized 1-to-$M$ quantum NOT gate. Our result generalizes previous results concerning quantum NOT gate for a quantum state distributed uniformly on the whole Bloch sphere as well as the phase covariant quantum state. We have also shown that such 1-to-$M$ optimized NOT gate can be implemented using a sequential generation scheme via matrix product states (MPS).

We studied the persistent photoconductivity (PPC) effect in AlGaN/AlN/GaN heterostructures with two different Al-compositions (x=0.15 and x=0.25). The two-dimensional electron gas formed at the AlN/GaN heterointerface was characterized by Shubnikov-de Haas and Hall measurements. Using optical illumination, we were able to increase the carrier density of the Al0.15Ga0.85N/AlN/GaN sample from 1.6x10^{12} cm^{-2} to 5.9x1012 cm^{-2}, while the electron mobility was enhanced from 9540 cm2/Vs to 21400 cm2/Vs at T = 1.6 K. The persistent photocurrent in both samples exhibited a strong dependence on illumination wavelength, being highest close to the bandgap and decreasing at longer wavelengths. The PPC effect became fairly weak for illumination wavelengths longer than 530 nm and showed a more complex response with an initial negative photoconductivity in the infrared region of the spectrum (>700 nm). The maximum PPC-efficiency for 390 nm illumination was 0.011% and 0.005% for Al0.25Ga0.75N/AlN/GaN and Al0.15Ga0.85N/AlN/GaN samples, respectively. After illumination, the carrier density could be reduced by annealing the sample. Annealing characteristics of the PPC effect were studied in the 20-280 K temperature range. We found that annealing at 280 K was not sufficient for full recovery of the carrier density. In fact, the PPC effect occurs in these samples even at room temperature. Comparing the measurement results of two samples, the Al0.25Ga0.75N/AlN/GaN sample had a larger response to illumination and displayed a smaller recovery with thermal annealing. This result suggests that the energy scales of the defect configuration-coordinate diagrams for these samples are different, depending on their Al-composition., Comment: 27 pages, 8 figures

The investigation of n-GaN/Al(x)Ga(1-x)N/n-GaN (n-1-n) devices for pressure sensors in extreme planetary environments are presented.