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We demonstrate a trapped-ion system with two competing dissipation channels, implemented independently on two ion species co-trapped in a Paul trap. By controlling coherent spin-oscillator couplings and optical pumping rates we explore the phase diagram of this system, which exhibits a regime analogous to that of a (phonon) laser but operates close to the quantum ground state with an average phonon number of $\bar{n}<10$. We demonstrate phase locking of the oscillator to an additional resonant drive, and also observe the phase diffusion of the resulting state under dissipation by reconstructing the quantum state from a measurement of the characteristic function.

We propose and implement a novel scheme for dissipatively pumping two qubits into a singlet Bell state. The method relies on a process of collective optical pumping to an excited level, to which all states apart from the singlet are coupled. We apply the method to deterministically entangle two trapped ${}^{40}\text{Ca}^+$ ions with a fidelity of $93(1)\%$. We theoretically analyze the performance and error susceptibility of the scheme and find it to be insensitive to a large class of experimentally relevant noise sources., Comment: 15 pages, 10 figures

We report on theoretical investigations of carrier scattering asymmetry at ferromagnet-semiconductor junctions. By an analytical $2\times 2$ spin model, we show that, when Dresselhaus interactions is included in the conduction band of III-V $T_d$ symmetry group semiconductors, the electrons may undergo a difference of transmission vs. the sign of their incident parallel wavevector normal to the in-plane magnetization. This asymmetry is universally scaled by a unique function independent of the spin-orbit strength. This particular feature is reproduced by a multiband $\mathbf{k}\cdot \mathbf{p}$ tunneling transport model. Astonishingly, the asymmetry of transmission persists in the valence band of semiconductors owing to the inner atomic spin-orbit strength and free of asymmetric potentials . We present multiband $14\times 14$ and $30\times 30$ $\mathbf{k}\cdot \mathbf{p}$ tunneling models together with tunneling transport perturbation calculations corroborating these results. Those demonstrate that a tunnel spin-current normal to the interface can generate a surface transverse charge current, the so-called Anomalous Tunnel Hall Effect., Comment: 6 pages, 3 figures, conference MIMS 2017 Moscow (submitted), Journal of Magnetism and Magnetic Materials (JMMM), 2017

We report on theoretical investigations of scattering asymmetry vs. incidence of carriers through exchange barriers and magnetic tunnel junctions made of semiconductors involving spin-orbit interaction. By an analytical 2?2 spin model, we show that, when Dresselhaus interaction is included in the conduction band of antiparallel magnetized electrodes, the electrons can undergo a large difference of transmission depending on the sign of their incident in-plane wavevector. In particular, the transmission is fully quenched at some points of the Brillouin zone for specific in-plane wavevectors and not for the opposite. Moreover, it is universally scaled by a unique function independent of the spin-orbit strength. This particular feature is reproduced by a 14 ? 14 band k ? p model showing, in addition, corresponding effects in the valence band and highlighting the robustness of the effect, which even persists for a single magnetic electrode. Upon tunneling, electrons undergo an asymmetrical deflection which results in the occurrence of a transverse current, giving rise to a so-called Tunnel Hall Effect.

The electrostatic potential profile of a spherical soft particle is derived by solving the Poisson-Boltzmann equations on a spherical system both numerically and analytically. The soft particle is assumed to consist of an ion-permeable charged outer layer and a non-permeable charged core with constant charged density. The contribution of the core to the potential profile is calculated for different charges and dielectric constants. Our results show that the charged core heavily influences the local potential within the soft particle. In contrast, the potential distribution outside the particle in the salt solution is found to be weakly dependent on the core features. These findings are consistent with previous experiments showing the minor impact of the core of the MS2 virus on its overall electrical properties. Our studies also indicate that while a change in temperature from 290 K to 310 K only slightly varies the potential, the ionic strength in the range of 1-600 mM has a significant effect on the potential profile. Our studies would provide good understanding for experimental research in the field of biophysics and nanomedicine., Comment: 5 pages, 3 figures

We present an experimental demonstration of strong coupling between a surface plasmon propagating on a planar silver substrate, and the lowest excited state of CdSe nanocrystals. Variable-angle spectroscopic ellipsometry measurements demonstrated the formation of plasmon-exciton mixed states, characterized by a Rabi splitting of $\sim$ 82 meV at room temperature. Such a coherent interaction has the potential for the development of plasmonic non-linear devices, and furthermore, this system is akin to those studied in cavity quantum electrodynamics, thus offering the possibility to study the regime of strong light-matter coupling in semiconductor nanocrystals at easily accessible experimental conditions., Comment: 12 pages, 4 figures

We consider spin-dependent tunneling through a gallium arsenide barrier, a material which has no inversion symmetry. We are dealing with free electrons, with one effective mass and a spin-splitting in the barrier material. When we take into account both the spin-orbit interaction and the absence of the inversion symmetry, the evanescent states in the barrier are spin split and the tunneling process can become rather involved. Along some crystallographic directions, the incident wave experiences spin filtering during the tunneling. These results open stimulating perspectives for spin manipulation in tunnel devices.