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Estimation of permutation entropy (PE) using Bayesian statistical methods is presented for systems where the ordinal pattern sampling follows an independent, multinomial distribution. It is demonstrated that the PE posterior distribution is closely approximated by a standard Beta distribution, whose hyperparameters can be estimated directly from moments computed analytically from observed ordinal pattern counts. Equivalence with expressions derived previously using frequentist methods is also demonstrated. Because Bayesian estimation of PE naturally incorporates uncertainty and prior information, the orthodox requirement that $N \gg D!$ is effectively circumvented, allowing PE to be estimated even for very short time series. Self-similarity tests on PE posterior distributions computed for a semiconductor laser with optical feedback (SLWOF) system show its PE to vary periodically over time., Comment: 9 pages, 4 figures

We demonstrate the generation of coherent Stokes pulses with randomized linear-polarization in diamond, when the pump wave-vector and linear polarization were oriented along the $[110]$ and $[1\bar{1}0]$ axes respectively. In this configuration the excitation of multiple Raman modes produces isotropic gain, preventing the Stokes pulse from acquiring a deterministic orientation and is instead randomized by the zero-point motion of the crystal. Experimental polarization measurements were consistent with an independent, identical distribution with an estimated entropy rate of 6.67 bits per pulse., Comment: 6 pages, 4 figures

Ultrafast, femtosecond laser pulse interaction with dielectric materials has shown them to have significantly higher laser fluence threshold requirements, as compared to metals and semiconductors, for laser material modification, such as laser ablation. Examples of dielectrics are crystalline materials such as quartz and sapphire, and amorphous glasses. The interaction between femtosecond laser pulses, at a wavelength with negligible linear absorption, and a dielectric has been found to be weak, and multiple pulse irradiation is therefore typically used in order to see significant and quantifiable effects. In this study the dielectric is the crystalline, layered, natural mineral muscovite, a mica with formula KAl_2 (Si_3 Al) O_10 (OH)_2. Muscovite, newly cleaved, is used in a wide range of technological and scientific applications including as an insulating material in electronics and as an ultra-flat and ultra-clean substrate. A single, ~800 nm wavelength, ~6 micron spotsize, ~150 fs laser pulse is found to lead to a systematic range of laser modification topologies, as a function of the fluence of the single laser pulse, including bulk removal of material. The fs laser pulse/material interaction is greater than expected for a standard dielectric at a given fluence. Optical surface profiling and FESEM are used to characterise the topologies. Contrasting the results of the two techniques supports the use of optical surface profiling to characterise the material modification despite its limitations in lateral resolution as compared to FESEM. The interlayer mineral water content of natural muscovite is proposed as the primary reason that mica behaves differently to a standard dielectric when irradiated with a single 800 nm fs laser pulse.