1. Pulsed-mode metalorganic vapor-phase epitaxy of GaN on graphene-coated c-sapphire for freestanding GaN thin films
- Author
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Lee, Seokje, Abbas, Muhammad S., Yoo, Dongha, Lee, Keundong, Fabunmi, Tobiloba G., Lee, Eunsu, Kim, Han Ik, Kim, Imhwan, Jang, Daniel, Lee, Sangmin, Lee, Jusang, Park, Ki-Tae, Lee, Changgu, Kim, Miyoung, Lee, Yun Seog, Chang, Celesta S., and Yi, Gyu-Chul
- Subjects
Condensed Matter - Materials Science ,Physics - Applied Physics - Abstract
We report the growth of high-quality GaN epitaxial thin films on graphene-coated c-sapphire substrates using pulsed-mode metalorganic vapor-phase epitaxy, together with the fabrication of freestanding GaN films by simple mechanical exfoliation for transferable light-emitting diodes (LEDs). High-quality GaN films grown on the graphene-coated sapphire substrates were easily lifted off using thermal release tape and transferred onto foreign substrates. Furthermore, we revealed that the pulsed operation of ammonia flow during GaN growth was a critical factor for the fabrication of high-quality freestanding GaN films. These films, exhibiting excellent single crystallinity, were utilized to fabricate transferable GaN LEDs by heteroepitaxially growing InxGa1-xN/GaN multiple quantum wells and a p-GaN layer on the GaN films, showing their potential application in advanced optoelectronic devices., Comment: This document is the unedited Author's version of a Submitted Work that was subsequently accepted for publication in Nano Letters, copyright 2023 American Chemical Society after peer review. To access the final edited and published work see https://doi.org/10.1021/acs.nanolett.3c03333
- Published
- 2023
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