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Recent advances in nanomaterials have pushed the boundaries of nanoscale fabrication to the limit of single atoms (SAs), particularly in heterogeneous catalysis. Single atom catalysts (SACs), comprising minute amounts of transition metals dispersed on inert substrates, have emerged as prominent materials in this domain. However, overcoming the tendency of these SAs to cluster beyond cryogenic temperatures and precisely arranging them on surfaces pose significant challenges. Employing organic templates for orchestrating and modulating the activity of single atoms holds promise. Here, we introduce a novel single atom platform (SAP) wherein atoms are firmly anchored to specific coordination sites distributed along carbon-based polymers, synthesized via on-surface synthesis (OSS). These SAPs exhibit atomiclevel structural precision and stability, even at elevated temperatures. The asymmetry in the electronic states at the active sites anticipates the enhanced reactivity of these precisely defined reactive centers. Upon exposure to CO and CO2 gases at low temperatures, the SAP demonstrates excellent trapping capabilities. Fine-tuning the structure and properties of the coordination sites offers unparalleled flexibility in tailoring functionalities, thus opening avenues for previously untapped potential in catalytic applications., Comment: Main text (12 pages, 4 figures) and supplementary information (15 pages, 16 figures)

Atomically precise graphene nanoribbons (GNRs) have a wide range of electronic properties that depend sensitively on their chemical structure. Several types of GNRs have been synthesized on metal surfaces through selective surface-catalyzed reactions. The resulting GNRs are adsorbed on the metal surface, which may lead to hybridization between the GNR orbitals and those of the substrate. This makes investigation of the intrinsic electronic properties of GNRs more difficult, and also rules out capacitive gating. Here we demonstrate the formation of a dielectric gold chloride adlayer that can intercalate underneath GNRs on the Au(111) surface. The intercalated gold chloride adlayer electronically decouples the GNRs from the metal and leads to a substantial hole doping of the GNRs. Our results introduce an easily accessible tool in the in situ characterization of GNRs grown on Au(111) that allows for exploration of their electronic properties in a heavily hole-doped regime., Comment: Supporting information follows the main text in the same file

Graphene nanoribbons (GNRs) exhibit a broad range of physicochemical properties that critically depend on their width and edge topology. While the chemically stable GNRs with armchair edges (AGNRs) are semiconductors with width-tunable band gap, GNRs with zigzag edges (ZGNRs) host spin-polarized edge states, which renders them interesting for applications in spintronic and quantum technologies. However, these states significantly increase their reactivity. For GNRs fabricated via on-surface synthesis under ultrahigh vacuum conditions on metal substrates, the expected reactivity of zigzag edges is a serious concern in view of substrate transfer and device integration under ambient conditions, but corresponding investigations are scarce. Using 10-bromo-9,9':10',9''-teranthracene as a precursor, we have thus synthesized hexanthene (HA) and teranthene (TA) as model compounds for ultrashort GNRs with mixed armchair and zigzag edges, characterized their chemical and electronic structure by means of scanning probe methods, and studied their chemical reactivity upon air exposure by Raman spectroscopy. We present a detailed identification of molecular orbitals and vibrational modes, assign their origin to armchair or zigzag edges, and discuss the chemical reactivity of these edges based on characteristic Raman spectral features.

We investigate stochastic entropy production in a two-level quantum system that performs Rabi oscillations while undergoing quantum measurement brought about by continuous random disturbance by an external measuring device or environment. The dynamics produce quantum Zeno and anti-Zeno effects for certain measurement regimes, and the stochastic entropy production is a measure of the irreversibility of the behaviour. When the strength of the measurement disturbance is time-dependent, the stochastic entropy production separates into three components. Two represent relaxational behaviour, one being specific to systems represented by coordinates that are odd under time reversal symmetry, and a third characterises the nonequilibrium stationary state arising from breakage of detailed balance in the dynamics. The study illustrates how the ideas of stochastic thermodynamics may be applied in similar ways to both quantum and classical systems.

The electronic, optical and magnetic properties of graphene nanoribbons (GNRs) can be engineered by controlling their edge structure and width with atomic precision through bottom-up fabrication based on molecular precursors. This approach offers a unique platform for all-carbon electronic devices but requires careful optimization of the growth conditions to match structural requirements for successful device integration, with GNR length being the most critical parameter. In this work, we study the growth, characterization, and device integration of 5-atom wide armchair GNRs (5-AGNRs), which are expected to have an optimal band gap as active material in switching devices. 5-AGNRs are obtained via on-surface synthesis under ultra-high vacuum conditions from Br- and I-substituted precursors. We show that the use of I-substituted precursors and the optimization of the initial precursor coverage quintupled the average 5-AGNR length. This significant length increase allowed us to integrate 5-AGNRs into devices and to realize the first field-effect transistor based on narrow bandgap AGNRs that shows switching behavior at room temperature. Our study highlights that optimized growth protocols can successfully bridge between the sub-nanometer scale, where atomic precision is needed to control the electronic properties, and the scale of tens of nanometers relevant for successful device integration of GNRs.