1. Excitonic lasing of strain-free InP(As) quantum dots in AlInAs microdisk
- Author
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Lebedev, D. V., Kulagina, M. M., Troshkov, S. I., Bogdanov, A. A., Vlasov, A. S., Davydov, V. Yu., Smirnov, A. N., Merz, J. L., Kapaldo, J., Gocalinska, A., Juska, G., Moroni, S. T., Pelucchi, E., Barettin, D., Rouvimov, S., and Mintairov, A. M.
- Subjects
Physics - Optics - Abstract
Formation, emission and lasing properties of strain-free InP(As)/AlInAs quantum dots (QDs) embedded in AlInAs microdisk (MD) cavity were investigated using transmission electron microscopy and photoluminescence (PL) techniques. In MD structures, the QDs having nano-pan-cake shape have height of ~2 nm, lateral size of 20-50 nm and density of ~5x109 cm-2. Their emission observed at ~940 nm revealed strong temperature quenching, which points to exciton decomposition. It also showed unexpected type-I character indicating In-As intermixing, as confirmed by band structure calculations. We observed lasing of InP(As) QD excitons into whispering gallery modes in MD having dimeter ~3.2 mkm and providing free spectral range of ~27 nm and quality factors up to Q~13000. Threshold of ~50 W/cm2 and spontaneous emission coupling coefficient of ~0.2 were measured for this MD-QD system.
- Published
- 2017
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