1. Influence of Stoichiometry on the Optical and Electrical Properties of Chemical Vapor Deposition Derived MoS$_{2}$
- Author
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Kim, In Soo, Sangwan, Vinod K., Jariwala, Deep, Wood, Joshua D., Park, Spencer, Chen, Kan-Sheng, Shi, Fengyuan, Ruiz-Zepeda, Francisco, Ponce, Arturo, Jose-Yacaman, Miguel, Dravid, Vinayak P., Marks, Tobin J., Hersam, Mark C., and Lauhon, Lincoln J.
- Subjects
Condensed Matter - Materials Science - Abstract
Ultrathin transition metal dichalcogenides (TMDCs) of Mo and W show great potential for digital electronics and optoelectronic applications. Whereas early studies were limited to mechanically exfoliated flakes, the large-area synthesis of 2D TMDCs has now been realized by chemical vapor deposition (CVD) based on a sulfurization reaction. Since then, the optoelectronic properties of CVD grown monolayer MoS$_{2}$ have been heavily investigated, but the influence of stoichiometry on the electrical and optical properties has been largely overlooked. Here we systematically vary the stoichiometry of monolayer MoS$_{2}$ during CVD via controlled sulfurization and investigate the associated changes in photoluminescence and electrical properties. X-ray photoelectron spectroscopy is employed to measure relative variations in stoichiometry and the persistence of MoO$_{x}$ species. As MoS$_{2-{\delta}}$ is reduced (increasing {\delta}), the field-effect mobility of monolayer transistors increases while the photoluminescence yield becomes non-uniform. Devices fabricated from monolayers with the lowest sulfur content have negligible hysteresis and a threshold voltage of ~0 V. We conclude that the electrical and optical properties of monolayer MoS$_{2}$ crystals can be tuned via stoichiometry engineering to meet the requirements of various applications.
- Published
- 2014
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