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For graphene to be used in semiconductor applications, a wide energy gap of at least 0.5 eV at the Dirac energy must be opened without the introduction of atomic defects. However, such a wide energy gap has not been realized in graphene, except in the cases of narrow, chemically terminated graphene nanostructures with inevitable edge defects. Here, we demonstrated that a wide energy gap of 0.74 eV, which is larger than that of germanium, could be opened in uniform monolayer graphene without the introduction of atomic defects into graphene. The wide energy gap was opened through the adsorption of self-assembled twisted sodium nanostrips. Furthermore, the energy gap was reversibly controllable through the alternate adsorption of sodium and oxygen. The opening of such a wide energy gap with minimal degradation of mobility could improve the applicability of graphene in semiconductor devices, which would result in a major advancement in graphene technology., Comment: 18 pages, 4 figures

We report that the $\pi$ band of graphene sensitively changes as a function of an external potential induced by Na especially when the potential becomes periodic at low temperature. We have measured the band structures from the graphene layers formed on the 6H-SiC(0001) substrate using angle-resolved photoemission spectroscopy with synchrotron photons. With increasing Na dose, the $\pi$ band appears to be quickly diffused into background at 85 K whereas it becomes significantly enhanced its spectral intensity at room temperature (RT). A new parabolic band centered at $k\sim$1.15 \AA$^{-1}$ also forms near Fermi energy with Na at 85 K while no such a band observed at RT. Such changes in the band structure are found to be reversible with temperature. Analysis based on our first principles calculations suggests that the changes of the $\pi$ band of graphene be mainly driven by the Na-induced potential especially at low temperature where the potential becomes periodic due to the crystallized Na overlayer. The new parabolic band turns to be the $\pi$ band of the underlying buffer layer partially filled by the charge transfer from Na adatoms. The five orders of magnitude increased hopping rate of Na adatoms at RT preventing such a charge transfer explains the absence of the new band at RT., Comment: 6 pages and 6 figures