1. Analysis of trap spectra in LEC and epitaxial GaAs
- Author
-
Vaitkus, J., Gaubas, E., Kazukauskas, V., Rinkevicius, V., Storasta, J., Tomasiunas, R., Smith, K. M., and O'Shea, V.
- Subjects
High Energy Physics - Experiment - Abstract
Different methods of trap parameter measurement are analysed. Transient photoconductivity and thermally stimulated effects were used to investigate the influence of traps in LEC SI-GaAs and high resistivity epitaxial GaAs. The peculiarities of the TSC were analysed and shown to be related to the influence of crystal micro-inhomogeneities., Comment: Invited talk, 6-th Workshop on Gallium Arsenide and Related Compounds June 22-26, 1998 Praha-Pruhonice, Czech Republic
- Published
- 1999
- Full Text
- View/download PDF