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We investigate the microstructural evolution in a ferroelectric to antiferroelectric phase transition at the morphotropic phase boundary in the Bi(1-x)SmxFeO3 system. Continuous Sm3+ substitution on the A-site induces short-range anti-parallel cation displacements as verified by the appearance of localized 1/4(110) weak spots in selected area electron diffraction patterns for 0.1

We report on the discovery of a lead-free morphotropic phase boundary in Sm doped BiFeO3 with a simple perovskite structure using the combinatorial thin film strategy. The boundary is a rhombohedral to pseudo-orthorhombic structural transition which exhibits a ferroelectric (FE) to antiferroelectric (AFE) transition at approximately Bi0.86Sm0.14FeO3 with dielectric constant and out-of-plane piezoelectric coefficient comparable to those of epitaxial (001) oriented Pb(Zr,Ti)O3 (PZT) thin films at the MPB. The discovered composition may be a strong candidate of a Pb-free piezoelectric replacement of PZT., Comment: 16 pages, 5 figures, submitted to Applied Physics Letters

We report resistivity, Hall effect, Nernst effect, and magnetoresistance measurements on T'-phase La1.85Y0.15CuO (LYCO) films prepared by pulsed laser deposition under different oxygen conditions. Our results show that superconductivity in LYCO originates from an oxygen-doped Mott-like insulator and not from a weakly correlated, half-filled band metal as proposed previously.