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Motivation for this work is: (1) Accurately characterize digital signal processor (DSP) core single-event effect (SEE) behavior (2) Test DSP cores across a large frequency range and across various input conditions (3) Isolate SEE analysis to DSP cores alone (4) Interpret SEE analysis in terms of single-event upsets (SEUs) and single-event transients (SETs) (5) Provide flight missions with accurate estimate of DSP core error rates and error signatures.

Commercial nonvolatile memory technology is attractive for space applications, but radiation issues are serious concerns. In addition, we discuss combined radiation/reliability concerns which are only beginning to be addressed.

A 1 GeV/u 5 6Fe ion beam allows for true 90deg tilt irradiations of various microelectronic c-0mponents and reveals relevant upset trends at the GCR Hux energy peak. Three SRAMs and an SRAM-based FPGA evaluated at the NASA Space Radiation Effects Laboratory demonstrate that a 90deg tilt irradiation yields a unique device response. These tilt angle effects need t-0 be screened for, and if found, pursued with radiation transport simulations to quantify their impact on event rate calculations.

A 1 GeV/u Fe-56 ion beam allows for true 90deg tilt irradiations of various microelectronic components and reveals relevant upset trends for an abundant element at the GCR flux energy peak.

Heavy ion irradiations have been performed: a) SEU varies little with angle of ion incidence b) MBU depend on the device orientation. The MBU response depends on the well orientation of the device. MRED simulation of an omni-directional GEO environment shows the MBU response to be a combination of response from different orientations. Testing and simulation must account for multiple orientations.