Search

Relationships between the coupling constant and the binding energy of threshold bound states are obtained in a simple manner from an iterative algorithm for solving the eigenvalue problem. The absence of threshold bound states in higher dimensions can be easily understood.

The iterative algorithm recently proposed by Waxman for solving eigenvalue problems, which relies on the method of moments, has been modified to improve its convergence considerably without sacrificing its benefits or elegance. The suggested modification is based on methods to calculate low-lying eigenpairs of large bounded hermitian operators or matrices.

In the iterative algorithm recently proposed by Waxman for solving eigenvalue problems, we point out that the convergence rate may be improved. For many non-singular symmetric potentials which vanish asymptotically, a simple analytical relationship between the coupling constant of the potential and the ground state eigenvalue is obtained which can be used to make the algorithm more efficient.

Complex atmosphere-ocean-land interactions govern the climate system and its variations. During the course of Earth history, nature has performed a large number of experiments involving climatic change; the geologic record contains much information regarding these experiments. This information should result in an increased understanding of the climate system, including climatic stability and factors that perturb climate. In addition, the paleoclimatic record has been demonstrated to be useful in interpreting the origin of important resources-petroleum, natural gas, coal, phosphate deposits, and many others.

Screening measurements and fabrication of metal oxide semiconductor and multilayer-bipolar wafers

Techniques for providing infrared data for use in failure analysis of semiconductor devices

Infrared display techniques and acceptance criteria for microcircuit qualification and semiconductor device failure analysis

The results of the program for the development of a more sensitive method for selecting silicon planar semiconductor devices for long life applications are reported. The manufacturing technologies (MOS and Bipolar) are discussed along with the screening procedures developed as a result of the tests and evaluations, and the effectiveness of the MOS and Bilayer screening procedures are evaluated.