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55Mn nuclear magnetic resonance and magnetization studies of the series of La0.67Sr0.33MnO3 thin films have been performed at low temperature. Two distinct lines were observed, at 322 MHz and 380 MHz, corresponding to two different phases, the former located at the interface, with localized charges, and the latter corresponding to the film bulk, with itinerant carriers (as it was also found in Ca manganite films). The spin-echo amplitude was measured as a function of a dc magnetic field applied either in the film plane or perpendicular to it. The field dependence of both the main NMR signal intensity and frequency shift is quite consistent with that calculated in a simple single domain model. The best fit to the model shows that magnetization rotation processes play a dominant role when the applied field exceeds the effective anisotropy field. Distinctly different magnetic anisotropies are deduced from the interface NMR signal., Comment: 7 pages, 8 figures

The resistivity of thin $La_{0.7}A_{0.3}MnO_{3}$ films ($A=Ca, Sr$) is investigated in a wide temperature range. The comparison of the resistivities is made among films grown by different techniques and on several substrates allowing to analyze samples with different amounts of disorder. In the low-temperature nearly half-metallic ferromagnetic state the prominent contribution to the resistivity scales as $T^{\alpha}$ with $\alpha \simeq 2.5$ for intermediate strengths of disorder supporting the theoretical proposal of single magnon scattering in presence of minority spin states localized by the disorder. For large values of disorder the low-temperature behavior of the resistivity is well described by the law $T^{3}$ characteristic of anomalous single magnon scattering processes, while in the regime of low disorder the $\alpha$ exponent tends to a value near 2. In the high temperature insulating paramagnetic phase the resistivity shows the activated behavior characteristic of polaronic carriers. Finally in the whole range of temperatures the experimental data are found to be consistent with a phase separation scenario also in films doped with strontium ($A=Sr$)., Comment: 5 figures