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The development of modern process CMOS integrated circuits has reduced the feature sizes and thus the reliability of the chip continuously. First, this paper proposed two kinds of single-node upset self-recovery feedback loops with low overhead. One is called P-RFL which is composed of P-type complementary element (CP) and Clocked CP (C2P), and the other is called N-RFL which is composed of N-type complementary element (CN) and Clocked CN (C2N). Second, in order to fully tolerate triple-node upsets (TNUs), this paper presents three TNU-hardened latches: C2P-C2N, DMR-C2P and DMR-C2N. Using the blocking ability of the C-element, the outputs of two RFLs are connected to the C-element array. Therefore, when any three nodes upset at the same time, the transient pulse propagates inside the latch step by step, and disappears after being blocked by the C-element, ensuring that the TNU-hardened latches can restore to the correct logic state. HSPICE simulations show that all the three proposed latches achieve lower power, delay and APDP, compared with other six TNU-hardened latches. DMR-C2N achieves the lowest power, delay and APDP. In addition, the PVT variations analysis show that three proposed TNU-hardened latches are less sensitive to the variations of process, voltage and temperature. [ABSTRACT FROM AUTHOR]

Given its advantageous power- and area-efficiency characteristics and its compatibility with traditional CMOS technology, the memristor has emerged as a promising candidate for low-power applications. To leverage these capacities, a new edge-triggered DFF was proposed, feeding back the master latches' output to the input of the memristor-based NOR two-stage inverse-phase memristor-based master–slave DFF. Then, a 3-bit flash ADC was designed using the new DFF and simulated to demonstrate its feasibility and correctness. Additionally, a 4-bit flash ADC was implemented and utilized to sample an analog signal, resulting in a correct digital signal. Herein, the 50 nm BSIM4 models were applied. The 3- and 4-bit flash ADCs, respectively, consumed 1.33 mw and 5.84 mw power at a 1 V supply with delay times of 17.8 ns and 70 ns. Compared with previous work, the new 4-bit flash ADC has fewer transistors and smaller power consumption, with about a 25.57% reduction according to the 90 nm process. [ABSTRACT FROM AUTHOR]

There are several significant advantages of memristors, such as their nano scale, fast switching speed, power efficiency and compatibility with CMOS technology, as one of the alternatives in the next generation of semiconductor storage devices. D-flip-flops (DFFs) based on the traditional CMOS process have some shortcomings, including a large area, high power, and charge leakage when scaling down. However, memristors offer a new approach to the design of DFFs with improved performance. Two simplified edge-triggered DFFs are proposed to reduce the number of devices via the Memristor-Rationed Logic (MRL) method, which utilizes the characteristic of transmitting signals in the two-stage inversion structure. In addition, two new 4-bit Linear Feedback Shift Registers (LFSRs) are designed and verified using the proposed DFFs. Compared to the partially existing LFSRs, the designed LFSRs reduce the number of devices significantly, decrease the power consumption by 32.7% and 33.3% and shorten the delay time by 34.5% and 30.7% for the NOR and NAND gates, respectively. Finally, the proposed falling-edge-triggered DFF is used to implement the major blocks of the Built-In Self-Test(BIST) circuit, and the simulation results confirm their correctness and feasibility. [ABSTRACT FROM AUTHOR]