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The appearance of kinks in the fourth quadrant of current–voltage curves decreases dramatically the efficiency of photovoltaic solar cells (SCs). These S-shaped ${J}$ – ${V}$ curves have been successfully reproduced using different lumped-parameter equivalent circuits, composed of two or more diodes. In this work, Mazhari’s three-diode equivalent circuit is used to model the S-shaped ${J}$ – ${V}$ curves of perovskite SCs numerically simulated with Silvaco ATLAS TCAD. The simulated cell structure is fluorine-doped tin oxide (FTO)/TiO2/MAPbI3/ 2, $2^{\prime}$ ,7, $7^{\prime}$ -tetrakis [N,N-di (4-methoxyphenyl) amino]-9, $9^{\prime}$ -spirobifluorene (Spiro-OMeTAD)/Au and, in order to reproduce ${J}$ – ${V}$ curves with a kink, perovskite carrier mobility has been decreased below 0.25 cm2/(V $\cdot $ s) and defect density in the active layer has been increased above $1\times 10^{{14}}$ cm $^{-{3}}$ . For each parameter, ${J}$ – ${V}$ curves have been simulated for different AM1.5 irradiation levels, from dark conditions up to 2 suns. For each device, a set of circuital parameters has been obtained independent of irradiation level. The dependence of Mazhari’s circuit parameters on both carrier mobility and defect density will be discussed.

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The potential opportunities of perovskite-based technology to further advance in the photovoltaic field and implement an extensive industrial application, will mainly depend on whether some of its weaknesses, such as current density-voltage (J−V) hysteresis, can be overcome. In this sense, a critical aspect is the understanding and the subsequent accurate description of hysteresis in perovskite cells. Here, we present the theoretical underpinnings to interpret non-ideal transient dynamics in stepwise-JVmeasurements, using electrical analysis strategies and fractional calculus tools. Our model was validated with experimental measurements of CsFAPbIBr-based photovoltaic perovskites of different active layer thicknesses with persistent long-range time photocurrents. It is reported that hysteresis phenomena increase with more pronounced non-ideal capacitive effects suggesting that more trapping events limit ion motion and carrier transport. Our main interest is to provide valuable information about the memory-based slow timescale dynamics, which exhibits a significant impact on the appearance of hysteresis and, to a large extent, on the operation of the solar cell.