1. Low-Temperature Plasma-Assisted Atomic-Layer-Deposited SnO2as an Electron Transport Layer in Planar Perovskite Solar Cells
- Author
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Kuang, Yinghuan, Zardetto, Valerio, van Gils, Roderick, Karwal, Saurabh, Koushik, Dibyashree, Verheijen, Marcel A., Black, Lachlan E., Weijtens, Christ, Veenstra, Sjoerd, Andriessen, Ronn, Kessels, Wilhelmus M.M., and Creatore, Mariadriana
- Abstract
In this work, we present an extensive characterization of plasma-assisted atomic-layer-deposited SnO2layers, with the aim of identifying key material properties of SnO2to serve as an efficient electron transport layer in perovskite solar cells (PSCs). Electrically resistive SnO2films are fabricated at 50 °C, while a SnO2film with a low electrical resistivity of 1.8 × 10–3Ω cm, a carrier density of 9.6 × 1019cm–3, and a high mobility of 36.0 cm2/V s is deposited at 200 °C. Ultraviolet photoelectron spectroscopy indicates a conduction band offset of ∼0.69 eV at the 50 °C SnO2/Cs0.05(MA0.17FA0.83)0.95Pb(I2.7Br0.3) interface. In contrast, a negligible conduction band offset is found between the 200 °C SnO2and the perovskite. Surprisingly, comparable initial power conversion efficiencies (PCEs) of 17.5 and 17.8% are demonstrated for the champion cells using 15 nm thick SnO2deposited at 50 and 200 °C, respectively. The latter gains in fill factor but loses in open-circuit voltage. Markedly, PSCs using the 200 °C compact SnO2retain their initial performance at the maximum power point over 16 h under continuous one-sun illumination in inert atmosphere. Instead, the cell with the 50 °C SnO2shows a decrease in PCE of approximately 50%.
- Published
- 2018
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