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Introducción y objetivos:Existen dos opciones para lograr la revascularización en la miocardiopatía isquémica, la intervención coronaria percutánea (ICP) o la cirugía de revascularización coronaria (CABG). Aunque los beneficios de la ICP para la miocardiopatía isquémica no están claros, conseguir una revascularización completa con ICP podría mejorar los resultados de forma comparable a la CABG.

The article discusses the economy of Hong Kong, China. The combination of British administration, Chinese enterprise and low cost labor made Hong Kong into a manufacturing leader in the 1950s. The city was the tenth largest exporter of goods in the world, the ninth largest exporter of services and the eight biggest banking center at the end of the 1990s. It mentions some successful original Hong Kong products, such as the Octopus rechargeable cash card.

Anomalous origin of the right pulmonary artery from the ascending aorta is a rare congenital anomaly. Magnetic resonance imaging (MRI) was performed on three patients with anomalous origin of the right pulmonary artery from the ascending aorta. ECG-gated, Tlweighted, spin-echo MRIs and cine MRIs were obtained. In one patient, postoperative MRI was also obtained. Echocardiography and cardiac catheterization were performed in three patients and angiocardiography was performed in two. MRI clearly showed anomalous origin of the right pulmonary artery from the posterior aspect of the ascending aorta, as well as combined anomalies including patent ductus arteriosus, aortopulmonary window, and interruption of the aortic arch in all three patients. Echocardiography missed this anomaly in all three. We suggest that MRI is an accurate imaging modality in diagnosing anomalous origin of the right pulmonary artery from the ascending aorta, obviating the need to perform angiocardiography

With aging, the skin becomes thin and drastically loses collagen. Extracellular superoxide dismutase (EC-SOD), also known as superoxide dismutase (SOD) 3, is the major SOD in the extracellular matrix of the tissues and is well-known to maintain the reduction‒oxidation homeostasis and matrix components of such tissues. However, the role of EC-SOD in aging-associated reductions of skin thickness and collagen production is not well-studied. In this study, we compared the histological differences in the dorsal skin of EC-SOD‒overexpressing transgenic mice (Sod3+/+) of different age groups with that in wild-type mice and also determined the underlying signaling mechanism. Our data showed that the skin thickness in Sod3+/+mice significantly increased with aging compared with that in wild-type male mice. Furthermore, Sod3+/+mice had promoted collagen production through the activation of adenosine monophosphate-activated protein kinase and Nrf2/HO-1 pathways in aged mice. Interestingly, subcutaneous injection of adeno-associated virus‒overexpressing EC-SOD exhibited increased skin thickness and collagen expression. Furthermore, combined recombinant EC-SOD and dihydrotestosterone treatment synergistically elevated collagen production through the activation of TGFβ in human dermal fibroblasts. Altogether, these results showed that EC-SOD prevents skin aging by promoting collagen production in vivo and in vitro. Therefore, we propose that EC-SOD may be a potential therapeutic target for antiaging in the skin.

The article presents questions and answers related to asthma. One general practitioner (GP) asks the role allergen avoidance play in the management of brittle asthma. Another questions the role of the GP in the management of brittle asthma. Lastly, another reader asks how can a GP approach the psychological aspects of brittle asthma.

A high-quality InP/InGaAs/InP double heterostructure was grown by molecular beam epitaxy (MBE) with polycrystalline GaAs and GaP decomposition sources for group V elements. By rapidly changing the cell temperature of GaAs and GaP decomposition sources during the growth switching period from InP to InGaAs and vice versa, a parasitic contamination-free InP/InGaAs/InP double heterostructure was obtained. The photoluminescence linewidths are 4.8 meV at 9 K for InGaAs on InP, and 1.76 meV at 9 K for InP on InGaAs. The X-ray rocking curve linewidth of InGaAs is as low as 20 arcsec without side lobes. These photoluminescence (PL) and X-ray measurement results are comparable to the best MBE data ever reported. Secondary ion mass spectroscopy depth profiles indicate that the contaminations due to the memory effect of group V elements are suppressed below 3 orders of magnitude and the parasitic gallium incorporation from polycrystalline GaAs decomposition sources is below 5 orders of magnitude, which are the best results obtained by MBE so far.