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This document provides information on various advancements and products in the field of fiber optics and communications. It includes the introduction of a new G5 Robotic Patch Panel system by Telescent, the commercial availability of Intlvac Thin Film's Fiber Metalization System, Hyper Photonix's participation in the Ethernet Alliance multivendor interoperability demonstration, and Acacia's introduction of 800ZR and 800G ZR+ modules for data center interconnects. These developments aim to meet the growing demands of hyperscale data centers and AI applications. [Extracted from the article]

• Propose a strategy to reduce electrical resistivity and complexity of current interconnect structure in ICs. • Emulate a semiconductor metallization environment employing porous nano-templates. • Design nanoscale Ru and Ru-Co structures by electrodeposition. • Uncover electrical properties of Ru-based nanowires and microstructural evolution. Nanoscale ruthenium (Ru)-based materials are promising replacements for existing multilayered Cu interconnects in integrated circuits. However, it is not easy to apply the results of previously reported studies directly to the electrochemical damascene process because the previous studies have mainly focused on thin films by dry deposition. Here, we report the electrical resistivity and microstructure of electrodeposited Ru nanowires. We estimate that the resistivity value of a 10 nm diameter Ru nanowire to be 71.6 μΩ cm after analyzing the resistivity values of individual nanowires with various diameters. Furthermore, we investigate the electrical properties of Ru x Co 1- x nanowires where x is 0.04–0.99 at.% as possible replacements of the current TaN barrier structures. Over the entire composition range, the resistivity values of alloys are much lower than that of the conventional TaN. Additionally, Ru and Ru-alloy nanowires surrounded by dielectric silica are thermally stable after 450 °C heat treatment. Therefore, the nanoscale Ru and Ru-Co alloys possessing low resistivity values can be candidates for the interconnect and barrier materials, respectively. [ABSTRACT FROM AUTHOR]

Intlvac Thin Film, a Canadian advanced manufacturing company, will be showcasing its new technologies and products at the OFC conference in San Diego. The company has expanded its capabilities in thin film deposition and materials science, particularly in the fiber optics industry. They have also developed systems for quantum computing and products for defense and national security applications. Additionally, Coherent Corp. has announced new high-power, uncooled pump laser modules for submarine and terrestrial applications, offering up to 1000 mW of output power for submarine applications and up to 2x700 mW for dual-chip platforms. These modules support energy-efficient networks and reduce overall power consumption. [Extracted from the article]

A study conducted at the University of Kiel in Germany explores the use of vacuum ultraviolet (VUV) radiation from an atmospheric plasma to initiate photochemistry and deposit thin films. The researchers focused on hexamethyldisilane (HMDS) as a model precursor and found that different admixtures resulted in the formation of SiO2-like films or slightly oxidized films. The study also discusses the photochemistry of HMDS-related ions and the challenges of film deposition by atmospheric plasmas. This research provides valuable insights into ion chemistry and ionic thin film deposition, offering potential applications in various fields. [Extracted from the article]

Keywords: Kiel; Germany; Europe; Biotechnology; Electronics EN Kiel Germany Europe Biotechnology Electronics 105 105 1 04/03/23 20230406 NES 230406 2023 APR 6 (NewsRx) -- By a News Reporter-Staff News Editor at Blood Weekly -- Investigators publish new report on Biotechnology. Keywords for this news article include: Kiel, Germany, Europe, Biotechnology, Electronics, University of Kiel. [Extracted from the article]

The article focuses on the use of advanced thin films software to improve fabrication systems. It discusses the role of deposition equipment and thin-film-coating monitoring for fabrication solutions. Also mentioned the development of the sensitivity-directed refinement (SDR) algorithm and the OptiLayer Software which is beneficial for fabrication design solutions.

Tungsten doped indium oxide (IWO) thin films were deposited on glass substrate at room temperature by radio frequency reactive magnetron sputtering. Chemical states analysis was carried out, indicating that valence states of element W in the films were W4+ and W6+. The effects of sputtering power and film thickness on the surface morphology, optical and electrical properties of IWO thin films were investigated. The IWO thin films had high transmittance in near infrared (NIR) spectral range. The resistivity, carrier mobility and carrier concentration owned their respective optimum values as sputtering power and thickness changed. The as-deposited IWO film with the minimum resistivity of 3.23 x 10-4 Ω cm was obtained at a sputtering power of 50 W, with carrier mobility of 27.1 cm² V-1 s-1, carrier concentration of 7.15 x 1020 cm-3, average transmittance about 80% in visible region and above 75% in NIR region. It may meet the application requirement of high conductivity and transparency in NIR wavelength region. [ABSTRACT FROM AUTHOR]

This work deals with the deposition of lead (Pb) thin films by the UV pulsed laser ablation technique, for their further use as photocathode devices in superconducting radio frequency guns. Scanning electron microscopy and atomic force microscopy analyses were performed to study the morphological features of Pb thin films deposited on Si (100) and Nb substrates. The films showed a granular structure with a nearly fully covered surface only for that one deposited on Nb substrate. X-ray diffraction measurements indicate the growth of polycrystalline Pb thin films with a preferential orientation along (111) planes. Results of the photoemission performance of Pb thin film deposited on Nb substrate showed a very encouraging average value of quantum efficiency of 6 × 10−5 through a single-photon absorption process, promoting further studies in the realisation of Pb photocathodes by this technique. [ABSTRACT FROM AUTHOR]

Abstract: This paper proposes an integrated numerical approach to model the thin-film deposition of amorphous silicon in the afterglow of argon plasma. The investigated plasma enhanced chemical vapor deposition (PECVD) process is governed by gas flow equations, chemical kinetics equations and surface reaction equations. Nineteen species, i.e. Ar, Ar*, Ar+, Si2H6, Si2H4, SiH4, SiH3, SiH2, SiH, H2, H, Si, Si+, , , SiH+, , H+ and electron (e) are considered, where 52 chemical reaction equations are adopted to describe the reactions in space among silane, hydrogen and argon plasma. Continuity, momentum and energy equations are solved to describe the velocity, pressure and temperature field of gas flow in the process chamber, while the density of neutral species is calculated from the corresponding transport equation considering its convection and diffusion effect, as well as the production and destruction due to chemical reactions. The transport equations of charged species are modeled by a drift–diffusion approximation. The ambipolar diffusion is assumed for charged species in the afterglow of argon plasma due to the vanishing of external electrical field. The equation of energy balance for electron is applied to the estimation of the electron temperature in the process chamber. In this study, ten reaction mechanisms of thin film growth are taken into account. The species considered in the deposition process on substrates are silane, the free radicals of silane, hydrogen, hydrogen atom, silicon atom, the species with dangling bond on the substrate surface covered by active and the passive site. All governing equations are discretized by using a finite volume method and solved by an iterative approach. The variables, such as position, velocity and moment, are expressed by Cartesian coordinates, where the non-staggered variable arrangement is adopted to define field variables. The deferred correction approach is employed to approximate for both diffusion and source terms, where SIMPLE algorithm is used to decouple pressure and velocity. A parallelized numerical scheme is implemented via MPI library. Numerical simulations with different operation parameters are performed to show their influence on the deposition rate. The numerical results indicate the deposition rate exhibits a double-peak characteristic on the substrate and give an average value varying between 5Å/s and 10Å/s for the studied PECVD process in the afterglow of argon plasma. [Copyright &y& Elsevier]

The article offers information on several products for cryogenic applications including the Aerospace Applications by Chart, Inc.; Master Bond EP30DP-NV two component epoxy system by Master Bond; SPC-1 Cryogenerator by Stirling Cryogenics designs; Nb3Sn Superconducting Wire by Hyper Tech Research, Inc.; and Polar Safe Transport Kits by Cole-Parmer.

Atomistic simulations of thin film deposition, based on the lattice Monte Carlo method, provide insights into the microstructure evolution at the atomic level. However, large-scale atomistic simulation is limited on a single computer—due to memory and speed constraints. Parallel computation, although promising in memory and speed, has not been widely applied in these simulations because of the intimidating overhead. The key issue in achieving optimal performance is, therefore, to reduce communication overhead among processors. In this paper, we propose a new parallel algorithm for the simulation of large-scale thin film deposition incorporating two optimization strategies: (1) domain decomposition with sub-domain overlapping and (2) asynchronous communication. This algorithm was implemented both on message-passing-processor systems (MPP) and on cluster computers. We found that both architectures are suitable for parallel Monte Carlo simulation of thin film deposition in either a distributed memory mode or a shared memory mode with message-passing libraries. [Copyright &y& Elsevier]

The article presents a study from the University of Michigan on the use of Kirigami thin-film photovoltaic cells for solar energy acquisition. The technique was based on the Japanese Kirigami paper art which is controlled within a predicted pointing vector. The study also uses a thin-film gallium arsenide (GaAs) solar cells fabricated in nondestructive epitaxial lift-off.

The article evaluates the NANO 36™ Thin Film Deposition System by vacuum products and systems supplier Kurt J. Lesker Co.

The article features the 2017 PVD75 PRO Line Thin Film Deposition System Platform from Kurt J. Lesker Co.