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Source code summarization is the task of writing natural language descriptions of source code. A typical use case is generating short summaries of subroutines for use in API documentation. The heart of almost all current research into code summarization is the encoder–decoder neural architecture, and the encoder input is almost always a single subroutine or other short code snippet. The problem with this setup is that the information needed to describe the code is often not present in the code itself—that information often resides in other nearby code. In this paper, we revisit the idea of “file context” for code summarization. File context is the idea of encoding select information from other subroutines in the same file. We propose a novel modification of the Transformer architecture that is purpose-built to encode file context and demonstrate its improvement over several baselines. We find that file context helps on a subset of challenging examples where traditional approaches struggle.

To link to full-text access for this article, visit this link: http://dx.doi.org/10.1016/j.ijpe.2010.04.048 Byline: Yit-Ming Yang (a), Chia-Yi Su (b), W.L. Pearn (b) Keywords: Economic design; Multiple assignable causes; Exponential shock model Abstract: Extending for the case of a single assignable cause to allow for the second occurrence of an assignable cause following the first occurrence and the probability of the assignable causes following exponential distribution, the process-failure mechanism having a fixed hazard rate. We present a cost model and determine the optimal values of the design parameters, the sample size, the sampling intervals and control limit coefficient by minimizing the expected cost per unit time with respect to exponential parameters change. Finally, suggesting the performance of the loss-cost and sensitivity analyses of the design parameters and loss-cost which depend on the model parameters and shift amounts closely are also presented. Author Affiliation: (a) Johnny and Frank International Management Consulting Company, Sansia, Taipei, Taiwan (b) Department of Industrial Engineering and Management, National Chiao Tung University, Hsinchu 30050, Taiwan Article History: Received 9 June 2008; Accepted 28 April 2010

A code summary is a brief natural language description of source code. Summaries are usually only a single sentence long, and yet form the backbone of developer documentation. A short descriptions such as “changes all visible polygons to the color blue” can give a programmer a high-level idea of what code does without the effort of reading the code itself. Recently, products based on Large Language Models such as ChatGPT have demonstrated a strong ability to write these descriptions automatically. However, to use these tools, programmers must send their code to untrusted third parties for processing (e.g., via an API call). This loss of custody is not acceptable to many organizations. In this paper, we present an alternative: we train an open source model using sample output generated by GPT-3.5 in a process related to knowledge distillation. Our model is small enough (350 m parameters) to be run on a single 16gb GPU, yet we show in our evaluation that it is large enough to mimic GPT-3.5 on this task.

•Glycosaminoglycan biosynthesis pathway and CHST11, a key chondroitin sulfate biosynthetic enzyme, were up-regulated in NSCLC metastasis.•The enzymatic activity of CHST11 confers NSCLC metastasis in vitroand in vivo.•CHST11 and its downstream effector, CP facilities NSCLC metastasis in vitroand in vivo.•CHST11 promotes NSCLC metastasis via CP-iron metabolism.•The CHST11-CP-iron axis may serve as a new therapeutic target against NSCLC metastasis.

The experimental realization of a p-type Si/SiGe heterostructure metal oxide semiconductor field-effect transistor (HMOSFET) structure with a strained Si1−xGexgraded well as the conducting channel is reported utilizing ultra-high-vacuum chemical vapor deposition (UHVCVD). The graded variation of the Ge fraction in channel can reduce the relaxation of strained SiGe epilayer. Simultaneously, rapid thermal oxidation (RTO) was used to obtain a high-quality thin-gate oxide films avoiding high thermal budgets which will cause the strain relaxation of graded Si1−xGexlayer. The proposed device with a 0.5×100 μm2gate exhibits a well-done transistor behavior. An extrinsic transconductance of 130 mS/mm at room temperature has been obtained.

Gastric volvulus is a rare disease in the pediatric population. Its clinical presentation is exceedingly variable, and without a high index of suspicion, delayed or missed diagnosis is not uncommon as illustrated by this report of a 13-month-old boy with a puzzling presentation of chronic wheezing and cough for 1 year. There were no gastrointestinal symptoms. The symptoms were attributed to bronchiolitis, pneumonia, laryngomalacia, or reactive airway disease by several practicing physicians. A detailed history revealed that the wheezing got worse after large meals. This information prompted an upper gastrointestinal contrast study, which led to the identification of organoaxial gastric volvulus and coexisting gastroesophageal reflux. The respiratory symptoms resolved dramatically after antireflux medications and lifestyle modification for gastroesophageal reflux. This report highlights chronic gastric volvulus in the differential diagnosis of infantile wheezing, particularly when the wheezing is present very early in life and associated with feeding.

A working p-type metal-oxide semiconductor field-effect transistor (MOSFET) structure, utilizing a graded-Si1-xGexlayer as the conducting channel, has been successfully fabricated by ultra high-vacuum chemical vapor deposition (UHVCVD). Rapid thermal oxidation (RTO) was used to obtain a high-quality thin-gate oxide films and decrease the high thermal budget which results in the strain relaxation of the graded Si1-xGexlayer. It is found that the proposed device exhibits suitable transistor characteristics. An extrinsic transconductance of 130 mS/mm at room temperature for a gate length of 0.6 µm has been obtained, which shows the great potential of this structure in Si-based device applications.