Search

The sun is still hiding behind weathered stone ramparts high above the old Moroccan port of Essaouira, but already, day-to-day business is well underway at the small city's bustling Place [...]

MOROCCO'S MERCEDES TAXIS As Morocco's Government forces the world'slast superannuated Mercedes taxis off itsstreets, we hitch a final ride THE SUN IS STILL hiding behind weatheredstone ramparts high above the old Moroccanport of Essaouira, but already day-to-daybusiness is well underway at the small city'sbustling Place des Grands Taxis. Regardless of all this, back in Essaouira andas far as Hasan Mesfar is concerned, it's goingto take more than a few thousand dirham anda shiny new car to make one veteran driverchange his ways, at least. So millions of robust andreliable Mercedes were soon swapped fornewer cars by their original owners and soldon the used car market. [Extracted from the article]

Critics also point out that the government has other motivations for subsidising new car purchases, namely the fact that in recent years, the country has invested heavily in developing its own automobile production facilities. The sun is still hiding behind weathered stone ramparts high above the old Moroccan port of Essaouira, but already, day-to-day business is well underway at the small city's bustling Place des Grand Taxis. Behind the wheel sits Hassan Mesfar, a wellknown and much-loved character in the neighbourhood, who is instantly recognisable by the car he drives: a 1974 Mercedes "Stroke 8". [Extracted from the article]

CdSe quantum rods (QRs) are very promising novel materials with unique electronic and optical properties. In this paper, we utilize a broad spectrum of techniques including high-resolution annular dark field scanning transmission electron microscope imaging, electron nanodiffraction, and computer simulations to study the internal structure of individual QRs. Random small-angle rotations are commonly found between various sections within individual QRs which can be resolved into twists around the c-axis and bends. The possible origins of these small-angle rotations are further studied. We propose that imperfect oriented attachment coupled with electrostatic interactions between smaller nanoparticles during the growth process results in such small-angle rotations. These small-angle rotations may significantly affect the electronic and mechanical properties of CdSe QRs.

Radiation damage in the high-temperature intermetallic Ni3Al due to electron beam irradiation at 100kV is reported. Preferential surface sputtering of aluminium is found to occur under conditions typical for microanalysis in an ultra-high-vacuum scanning transmission electron microscope. The overall sputtering cross-section is 20 b which implies a total loss rate of 7 monolayers per second. The subsequent nickel enrichment of the specimen can seriously affect attempts at determining the local chemistry of grain boundaries. Simple models for the mass loss are discussed, as are strategies for reducing the radiation damage. A b.c.c.-to-f.c.c. phase transition is expected to occur in radiation-damaged NiAl.

The article presents the results of the Auto Express Driver Power 2012 survey. Data reveal the ratings of car service providers in terms of helpfulness and attitude of staff, standard of workmanship, cleanliness and atmosphere, technical knowledge, progress and cost of work, value for money, and overall service. Among the car brands rated include Lexus, Porsche, Toyota, Skoda, Saab, Jaguar, Honda, Subaru, Nissan, Suzuki and Mercedes.

The typical electron micrograph is often rich in detail, sometimes too rich, and it can overwhelm the casual observer. The obvious interpretation may be quickly drawn and the next sample brought under study. Yet the electron interaction with the sample is rarely fully exploited. This may be the reason that electron microscopy may sometimes be dismissed as “just pretty pictures”. While in practice “pretty pictures” are not that easy to record or find, it is still true that the interaction of electrons with the sample is complex and therefore able to give the observer much more understanding than is normally found, provided only that the observer is able to unravel the observations. It is the rapid change in this situation that has been fascinating to watch unfurl during the past decades.In the Scanning Transmission Electron Microscope (STEM) electrons are focused into a tiny spot that is scanned over a thin film specimen.

Recently there has been increasing interest in nickel induced lateral recrystallization of amorphous silicon because of its potential to improve device performance and to lower the thermal budget during processing. The hypothesis is that the formation of nickel silicide provides a low energy nucleus for the recrystallization of amorphous silicon. The silicide, moving into a-Si, leaves crystalline silicon behind.1 The grains formed, therefore, tend to elongated. In this paper, we attempt to use TEMto investigate in detail the nickel assisted lateral crystallization of amorphous silicon. The sample was prepared by first depositing a 1000A thick low temperature, oxide layer, LTO, on Corning 1737 glass. A 1000A thick amorphous silicon layer, a-Si, and 1000A thick a-Si were deposited subsequently. The sample was pattern and etched with hydrofluoric acid to form lOum x lOum holes in the oxide layer. Next, 200A of nickel was evaporated onto the sample, followed by a 600°C, 6 hours anneal to induce lateral recrystallization.

The demands of the National Technology Roadmap for Semiconductors will necessitate measurement of dopant concentrations with greater spatial resolution than now possible. Current experimental and simulation experience indicate that Annular Dark Field (ADF) imaging in a Scanning Transmission Electron Microscope (STEM) should be able to determine dopant distributions with near atomic resolution. The ADF signal is derived from electrons diffusely scattered to high angles, resulting in contrast due to atomic number (Z-contrast) and defects in the crystal lattice. Thus, heavy atoms can be imaged by their Z-contrast and small atoms by the misfit strain induced in the silicon lattice. Atomic number scattering is proportional to Znwhere n is between 1.5 and 1.9 depending upon the inner detector angle of the ADF detector.

The demands of the National Technology Roadmap for Semiconductors will necessitate measurement of dopant concentrations with greater spatial resolution than now possible. Current experimental and simulation experience indicate that Annular Dark Field (ADF) imaging in a Scanning Transmission Electron Microscope (STEM) should be able to determine dopant distributions with near atomic resolution. The ADF signal is derived from electrons diffusely scattered to high angles, resulting in contrast due to atomic number (Z-contrast) and defects in the crystal lattice. Thus, heavy atoms can be imaged by their Z-contrast and small atoms by the misfit strain induced in the silicon lattice. Atomic number scattering is proportional to Znwhere n is between 1.5 and 1.9 depending upon the inner detector angle of the ADF detector.

Several letters to the editor are presented in response to articles in the August 14, 2006 issue, including "Pilgrim's Progress," "Celebrating the Pity of Brotherly Love," by Andrew Koritz Krull and "'We Are at War.'"