Search

High power single-mode wafer fused 1550 nm VCSELs with an active region based on InGaAs quantum wells are fabricated. An InP-based optical cavity and two AlGaAs/GaAs distributed Bragg reflector heterostructures were grown by molecular-beam epita oy. The current and optical confinements are provided by a lateral-structured buried tunnel junction with $\sim ~6~\mu \text{m}$ diameter and etching depth of ~ 20 nm. The VCSELs demonstrate ~ 3.4 mW single-mode continuous-wave output optical power and a threshold current about 2 mA at 20°C. The output optical power exceeds 1 mW at 70°C. A −3dB modulation bandwidth > 13 GHz is obtained at 20°C. Non-return-to-zero data transmission under back-to-back condition of ~ 37 Gbps is shown.

The integration of direct bandgap III–V materials on Si is one of the main bottlenecks on the way to cheap and highly efficient optoelectronic devices. The goal of this work is to study the formation and optical properties of GaAs nanoparticles synthesized on Si(111) by molecular beam epitaxy. It is demonstrated that GaAs tends to grow in the shape of faceted nanoparticles surrounded by the continuous layer of coalesced GaAs islands. The surface density and shape of the nanoparticles are strongly affected by the growth parameters. The nanostructures are studied via analysis of atomic force microscopy images to show their faceting with the {111}, {110}, and {31̅1} planes. Optical properties are studied by photoluminescence and Raman spectroscopy. Depending on the growth conditions, Raman spectra of individual epitaxial GaAs nanoparticles possess specific features typical for wurtzite GaAs, demonstrating the potential of the studied growth approach for the synthesis of the phase engineered nanostructures.

III–V planar semiconductor heterostructures based on GaPN alloy with a nitrogen concentration up to 2.12% were grown on Si(001) by plasma assisted molecular beam epitaxy. Dependence of nitrogen incorporation on the growth conditions and its effect on the crystal structure were investigated via analysis of X-ray diffraction, transmission electron microscopy, and Raman spectroscopy data. Continuous redshift and a substantial increase in intensity of the photoluminescence emission spectra were observed upon increase of nitrogen content. The effect of antiphase disorder in GaP buffer on the GaPN epilayer properties was studied. It was found that antiphase boundaries, protruding from the GaP/Si to the GaPN/GaP heterointerface, change their orientation and self-annihilate in the dilute nitride layer even with a low (0.5%) nitrogen content.