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Atomic layer deposition (ALD) is an enabling technology for encapsulating sensitive materials owing to its high-quality, conformal coating capability. Finding the optimum deposition parameters is vital to achieving defect-free layers; however, the high dimensionality of the parameter space makes a systematic study on the improvement of the protective properties of ALD films challenging. Machine-learning (ML) methods are gaining credibility in materials science applications by efficiently addressing these challenges and outperforming conventional techniques. Accordingly, this study reports the ML-based minimization of defects in an ALD-Al2O3passivation layer for the corrosion protection of metallic copper using Bayesian optimization (BO). In all experiments, BO consistently minimizes the layer defect density by finding the optimum deposition parameters in less than three trials. Electrochemical tests show that the optimized layers have virtually zero film porosity and achieve five orders of magnitude reduction in corrosion current as compared to control samples. Optimized parameters of surface pretreatment using Ar/H2plasma, the deposition temperature above 200 °C, and 60 ms pulse time quadruple the corrosion resistance. The significant optimization of ALD layers presented in this study demonstrates the effectiveness of BO and its potential outreach to a broader audience, focusing on different materials and processes in materials science applications.

Magnons have proven to be a promising candidate for low-power wave-based computing. The ability to encode information not only in amplitude but also in phase allows for increased data transmission rates. However, efficiently exciting nanoscale spin waves for a functional device requires sophisticated lithography techniques and therefore, remains a challenge. Here, we report on a method to measure the full spin wave isofrequency contour for a given frequency and field. A single antidot within a continuous thin film excites wave vectors along all directions within a single excitation geometry. Varying structural parameters or introducing Dzyaloshinskii–Moriya interaction allows the manipulation and control of the isofrequency contour, which is desirable for the fabrication of future magnonic devices. Additionally, the same antidot structure is utilized as a multipurpose spin wave device. Depending on its position with respect to the microstrip antenna, it can either be an emitter for short spin waves or a directional converter for incoming plane waves. Using simulations we show that such a converter structure is capable of generating a coherent spin wave beam. By introducing a short wavelength spin wave beam into existing magnonic gate logic, it is conceivable to reduce the size of devices to the micrometer scale. This method gives access to short wavelength spin waves to a broad range of magnonic devices without the need for refined sample preparation techniques. The presented toolbox for spin wave manipulation, emission, and conversion is a crucial step for spin wave optics and gate logic.

In many applications of copper in industry and research, copper migration and degradation of metallic copper to its oxides is a common problem. There are numerous ways to overcome this degradation with varying success. Atomic layer deposition (ALD) based encapsulation and passivation of the metallic copper recently emerged as a serious route to success owing to the conformality and density of the ALD films. So far, the majority of the studies have been focused on corrosion protection of copper in a variety of chemical environments, mostly at ambient temperature. An investigation of the stability of the ALD film stacks and copper’s interaction with them at elevated temperatures has been lacking. Here, we study the mitigation of copper oxidation and migration in 50 nm thick Al2O3/TiO2and Al2O3/SiO2bilayer ALD stacks. First, the corrosion dynamics were investigated via in situX-ray diffraction (XRD) at 350 °C under atmospheric conditions, and second, the interaction of copper with the passivation layers have been examined post factumusing detailed spectro-microscopic investigations. According to the XRD results, both ALD films exhibited excellent oxidation protection. In contrast, bare Cu immediately started to oxidize at 350 °C and transformed entirely to its known oxide phases in 4 h. Spectro-microscopic studies revealed that there are structural and chemical changes on the top surface and within the film stacks. The TiO2layer was crystallized during annealing, while the SiO2layer stayed in the amorphous phase, which was analyzed by grazing incidence XRD and transmission electron microscopy. According to scanning electron microscopy and X-ray photoelectron spectroscopy analysis, copper was detected on the surface with a higher amount in Al2O3/TiO2than Al2O3/SiO2, 5.2 at.% and 0.7 at.%, respectively. Based on the surface and cross-sectional analysis, copper migration was observed on both layers, albeit more substantially in Al2O3/TiO2. In the case of Al2O3/SiO2, the bulk of the copper was captured at the interface of the two oxides.