Hase, Yogesh, Sharma, Vidhika, Prasad, Mohit, Aher, Rahul, Shah, Shruti, Doiphode, Vidya, Waghmare, Ashish, Punde, Ashvini, Shinde, Pratibha, Rahane, Swati, Bade, Bharat, Ladhane, Somnath, Pathan, Habib, Patole, Shashikant P., and Jadkar, Sandesh R.
Metal chalcogenide indium selenide (In2Se3) is attracting increasing research interest for photodetector applications due to its excellent photoresponse and superior stability under ambient conditions. However, the temperature-dependent performance of In2Se3-based photodetectors has rarely been reported. Here, $\gamma $ -In2Se3 thin films were prepared at various deposition pressures using the RF magnetron sputtering for photodetector applications. The formation of single-phase $\gamma $ -In2Se3 films has been confirmed by the X-ray diffraction (XRD) and Raman analyses. Binding energies and elemental composition of $\gamma $ -In2Se3 films were examined by XPS analysis. Field emission scanning electron microscopy (FE-SEM) images show that the prepared $\gamma $ -In2Se3 films were crack- and pore-free, dense, compact, smooth, and have small grains. The optical energy bandgap decreases from 2.2 to 1.7 eV with an increase in deposition pressure. Then, the photoresponse of $\gamma $ -In2Se3-based photodetectors was investigated. The photodetector fabricated with $\gamma $ -In2Se3 at 5 Pa on an ITO-coated interdigital electrode (IDE) exhibited excellent photoresponsivity ( $2.82~\mu \text{A}$ /W) and detectivity ( $7.06\times 10^{{7}}$ Jones) with a fast rise time of 0.26 s and a decay time of 0.32 s. Finally, the temperature-dependent photoresponse of the photodetector fabricated with $\gamma $ -In2Se3 at 5 Pa is meticulously investigated. We found that the photodetector properties of a photodetector critically depend on the operating temperature.