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Dual gate device with mobility of 20cm2/Vs has been applied to improve power consumption of oxide products, the devices show high on‐state current of more than 45uA, good uniformity of ΔVth 1.03V, PBTS of 2.18V. The optimized pixel design of 14inch WQXGA achieves high aperture ratio of 74% and transmittance of over 9.5%. This 120Hz demo with brightness of 150nit can significantly reduce power consumption by 65%, from 2.1W to 1.27W.

A high mobility (29 cm2/Vs) and high light stability oxide thin‐film transistor (TFT) with 8 mask back channel etched (BCE) structure has been fabricated. Remarkable enhancement in negative gate‐bias thermal stress with illumination has been achieved, resulting in a threshold voltage (Vth) shift of ‐0.01 V after 1 hour. A 16.0 inch WQHD 240Hz LCD NB has been developed using high mobility and high light stability oxide TFT in G8.5.

Avertical oxide semiconductor thin film transistor (VTFT) with channel lengthof 0.4 μm wasdeveloped in our work. This VTFT has a small footprint, which isconducive to achieving higher resolutiom. In this work, we produced a VTFT by usinga hardmask etching process and designed different vertical structures, such asslope, hole, etc. The device achieved an on‐state current of 20.6 μA (normalized with width) and an off‐state current below 1 pA.

We present a dual active layer structure composed of indium–zinc oxide (InZnO) and indium–magnesium–zinc oxide (InMgZnO), which is fabricated using a simple solution process. By utilizing a heterojunction structure, combined with the high mobility of the front channel (InZnO) and the low ${\mathrm{\scriptstyle OFF}}$ -state current of the back channel (InMgZnO), we are able to achieve thin-film transistor (TFT) devices with enhanced performance and greater stability. Finally, we are able to optimize the device by optimizing the front channel thickness and treating the heterojunction interface with oxygen plasma, achieving a mobility ( $\mu _{\text {sat}}$ ) of 5.94 cm2/( $\text {V}\cdot \text {s}$ ), a threshold voltage of 0.98 V, an ${I} _{ { {\text {ON}}}}/{I} _{ { {\text {OFF}}}}$ ratio of $7.49\times 10^{{8}}$ , and a subthreshold swing (SS) of 325 mV/decade. Furthermore, the device maintains almost unchanged hysteresis voltage and exhibits high bias stability, which is demonstrated by the minimal threshold voltage variation of only 0.27 and −0.21 V under positive gate bias (PBS) and negative gate bias (NBS) for 1 h, respectively. The high electrical performance and stability of heterojunction TFTs can be attributed to the reduced interfacial defect state achieved through oxygen plasma treatment, as well as the electron redistribution occurring at the heterojunction interface.

With the rise of concept “meta‐universe”, VR/AR products get more attention currently. This paper introduces the applied oxide technology in ultra‐high resolution VR products and its future development trend. It was investigated how oxide technology become the choice of ultra‐high resolution due to its transparent property. It was also highly researched how to ensure the device characteristics with short channel through adjustment of process route. In the end, the future trend, such as higher mobility and removal of light shield layer, is simply introduces.

We have developed a new oxide BCE technology with high mobility of more than 46 cm2/Vs and used it in a 13.3‐inch 144Hz oxide UHD LCD panel for a Notebook PC. Because of the low carrier concentration of the new oxide materials, the high mobility characteristics can be ensured by using single‐layer materials, and the homogeneity of the prepared short‐channel TFTs is also perfect. They also have reliability PBTS/NBTIS enough to use the application. These results indicate that a variety of backplanes are possible to be made in a single factory of Oxide.

In this paper, the Pixel Design and the Process Technology of ultra‐high PPI display are investigated. For increasing the aperture open ratio in pixel design, the width of metal data line, the size of TFT and the crosstalk between metal lines are separately researched. The minimum of light shield for LTPS TFT is achieved since the mechanism between photoillumination and off‐state current is analyzed. In the meanwhile, the process of narrow metal lines and small via holes are developed. For conclusion, the aperture open ratio of backplane panel is achieved more than 55%.

We improved the performance of self‐aligned coplanar thin‐Film transistors with SOG Materials. In this work, the composition of TFT's buffer layer was changed by SOG Material to ensure the electrical performance of TFTs and high transparency of panel simultaneously. In addition, the shielding metal layer of self‐aligned top gate TFT was used as auxiliary cathode which can improve the uniformity of large size AMOLED display. We achieved 48% transparency of AMOLED display panel with 80PPI resolution ratio.

IGZO as the typical representative of oxide semiconductor used for TFT devices, has been widely used in display panel foundary, such as large size OLED, LTPO technology direction. To develop oxide based photodetector (sensor), not only can expand the application direction of oxide semiconductor material, moreover the oxide photodetector integrated with oxide TFT is more convenient. We developed several oxide based vertical MSM photodiode with schottky junction, the IGZO MSM can respond to ultra violet(UV), while new oxide material S1 and S2 can response to blue light. In order to form a schottky junction, metal electrodes materials should have high work function, thus we developed a high work function electrode suitable for mass production, and of witch work function is ~4.7eV. In addition, in order to gain the characteristics of diode, the ACT film need be deposited in high oxygen process to prevent form ohm contact. Assisted by TCAD simulation, we researched how to control the oxide schottky junction, including schottky junction, barrier tunneling, to instruct the material selection and electrical properties of control.

A 65‐inch 8K 120Hz ADS LCD TV based on novel technologies including New Oxide BCE, i‐ADS , DCT‐PS and SSD (Smart Sync Driving) , has achieved a high transmittance of 4.0% and a high charging rate of 92%. At the same time, BOE have developed the world's first 110‐inch 8K ADS‐LCD TV with 120Hz‐driven.

Subgap density of states (DOS) in amorphous‐InGaZnO4(a‐IGZO) influence the electrical property of TFT. In this paper, the donor‐like defects are extracted by using a technique based on monochromatic photonic capacitance voltage technique (MPCV). A white light source is used, which is different from MPCV. The result by contrastive analysis between DOS and NBIS, showed that the donor‐like defects (gD) were strongly correlated to NBIS. This techique can be used in analyzing the electrical properties of TFT.

Back-channel-etch-structured thin-film transistors (TFTs) employing amorphous Indium-Gallium-Zinc-Tin-Oxide (IGZTO) and Mo/Al as active layer and source/drain, respectively, were demonstrated with good electronic property and bias-temperature-stress stability. LCD panels addressed by such TFTs with gate-driver-on-array circuit passed the 1000- hour high-temperature-operating and high-temperature/humidity-operating reliability tests, revealing excellent prospect for mass-production.