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Evolution of photoluminescence of ethanol solutions of Zn(acac) from near UV to VIS was monitored for time period of several months. It has been found that transparent solutions with time colored in light brown that is accompanied by development of strong visible photoluminescence. This phenomenon is analyzed and discussed in terms of carbon precipitation. It has been demonstrated that at short aging period the photoluminescence is observed as relatively narrow and excitation independent emission band centered at at about 400 nm. In course of aging period emission is converted from violet to blue and green with corresponding shift of excitation band from UV to VIS. Electron paramagnetic resonance spectroscopy allows to identify carbon precipitates in the solutions approving hypothesis on nanocarbon nature of the photoluminescence.

This article presents a review of various methods for extracting the key parameters of junctionless (JL) MOSFETs, namely, the threshold voltage, flat-band voltage, doping concentration, carrier mobility, and parasitic series resistance. The applicability and limitations of different methods are analyzed using numerical simulations and experimental data for planar and tri-gate nanowire JL transistors with various nanowire widths.

The paper presents the results of electrical characterization in the wide temperature range (120 - 320 K) of the interface and bulk properties of high-k LaLuO3 dielectric deposited by molecular beam deposition (MBD) on silicon substrate. The energy distribution of interface state density is presented and typical maxima of 1.2x1011 and 2.5x1011 eV-1cm-2 were found at about 0.25 - 0.3 eV from the silicon valence band. The charge carrier transport through the dielectric at the forward bias was found to occur via Poole-Frenkel mechanism, while variable range hopping conduction (Mott's law) controls the current at the reverse bias.