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SYNOPSISIt has been requested that the Institute of Technology act positively on environmental education, and urge coexistence with the global environment. Nippon Institute of Technology (NIT) is committed to energy conservation and providing an environmentally friendly campus.As a part of eco-activity, we have not rebuilt the old main building, instead it was reinforced against earthquakes by an off-set structure and, at the same time, the landscape-oriented solar generator system with water proofing functions was installed on the rooftop. The entire building was used during the construction period.This text includes the works executed, simulation and the actual data gathered after completion.

High-fmax (> 160 GHz) AlGaAs/GaAs heterojunction bipolar transistors are developed using power-oriented layer structures and a selfalignment fabrication technology characterised by a base–metal overlaid structure. The fabricated power transistors tested at 2.6 GHz yield maximum power-added efficiencies of 69 and 60% at low supply voltages of 3 and 1.5 V, respectively.

A GaAs BFL dynamic binary frequency divider is designed and fabricated using advanced SAINT with asymmetric n+-layers and air-bridge technology. Operation above 20 GHz is achieved due to advanced SAINT FETs with 0.3 μm gate length and the reduction of parasitic capacitances between interlayer lines.

A new delay generator using two-step integration is proposed for direct digital synthesis. The new delay generator can provide precise delay timing since delay timing is unaffected by the propagation delay dispersion of the voltage comparator. Experimental results show that the frequency synthesiser operated successfully.