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Abstract: Aluminum-doped zinc oxide thin films have been grown by atomic layer deposition at a temperature of 200°C. Using X-ray diffraction, it has been established that the ZnO:Al thin films exhibits the reflections from the (100), (002), (110), and (201) ZnO hexagonal phase planes. The (101) and (102) planes have also been detected by electron diffraction. The ZnO:Al thin films grow smooth with a root-mean-square roughness of Rq= 0.33 nm and characteristic nanocrystallite sizes of ~70 and ~15 nm without additional aluminum or aluminum oxide phases. The transmission at a wavelength of 550 nm with regard to the substrate has been found to be 96%. The refractive indices and absorption coefficients of the ZnO:Al thin films in the wavelength range of 250–900 nm have been determined. The maximum refractive indices and absorption coefficients have been found to be 2.09 at a wavelength of 335 nm and 0.39 at a wavelength of 295 nm, respectively. The optical band gap is 3.56 eV. The resistivity, Seebeck coefficient, and power factor of the ZnO:Al thin films are ~1.02 × 10–3O cm, –60 µV/K, and 340 µW m–1K–2at room temperature, respectively. The maximum power factor attains 620 µW m–1K–2at a temperature of 200°C.

Ferromagnetic single-crystal epitaxial Fe3Si films and polycrystalline Fe5Si3films are obtained on Si substrates by molecular-beam epitaxy with in situ control of the structure, optical, and magnetic properties. The results of the structural, magnetic, and optical measurements are discussed. The experimental data are compared to the results of the microscopic calculation of the spin-polarized structure, the permittivity, and the optical conductivity spectra.

In this work we present the method of magneto-ellipsometry data analysis. Magneto- ellipsometry measurements are conducted in situ during nanostructures synthesis. Magnetic field is applied in configuration of magneto-optical transverse Kerr effect. Single-layer model of reflective nanostructures is in focus.