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Ferroelectric Bi4Ti3O12 ceramics are fabricated by conventional solid-state reaction process. The current-voltage characteristic of Bi4Ti3O12 sample exhibits a voltage-controlled negative differential resistance behavior at low field (E≤100V/mm), and an obvious PTC effect appears at around 100°C on the resistance-temperature curve. Based on conducting filament model about electrical transport, instead of Heywang-Jonker model, the experimental results of Bi4Ti3O12 ceramics are suitably explained.

The ferroelectricity of Bi3.25Eu0.75Ti3O12 (BET), and Bi3.25Eu0.75Ti2.97V0.03O12 (BETV) ceramics prepared at 1100oC by a conventional ceramic technique was investigated. These ceramics possess random-oriented polycrystalline structure. The remanent polarization (Pr) and coercive field (Ec) of the BET ceramics are 16 µC/cm2 and 62kV/cm, respectively. Furthermore, V substitution improves the Pr value of the BET ceramics up to 25 μC/cm2 which is larger than that of the BET ceramics. Therefore, co-sustitution of Eu and V in Bi4Ti3O12 (BIT) ceramic is effective for the improvement of its ferroelectricity.