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X-ray nanobeams are unique nondestructive probes that allow direct measurements of the nanoscale strain distribution and composition inside the micrometer thick layered structures that are found in most electronic device architectures. However, the method is usually extremely time-consuming, and as a result, data sets are often constrained to a few or even single objects. Here we demonstrate that by special design of a nanofocused X-ray beam diffraction experiment we can (in a single 2D scan with no sample rotation) measure the individual strain and composition profiles of many structures in an array of upright standing nanowires. We make use of the observation that in the generic nanowire device configuration, which is found in high-speed transistors, solar cells, and light-emitting diodes, each wire exhibits very small degrees of random tilts and twists toward the substrate. Although the tilt and twist are very small, they give a new contrast mechanism between different wires. In the present case, we image complex nanowires for nanoLED fabrication and compare to theoretical simulations, demonstrating that this fast method is suitable for real nanostructured devices.

InN 1D materials were successfully grown by metal-organic vapor phase epitaxy (MOVPE) and non-catalytic, template-free hydride metal-organic vapor phase epitaxy (H-MOVPE) on Si, GaN, and c-Al2O3 substrates. Dislocation-free, high-quality InN nanorods with [00.1] growth axis were formed via an apparent vapor-solid (VS) growth mechanism by H-MOVPE. On a contrary when conventional MOVPE was employed InN nanowires were grown via vapor-liquid-solid (VLS) mechanism. The controlled growth of self-seeded III-Nitride nanostructured materials has been demonstrated.

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InN 1D materials were successfully grown by metal-organic vapor phase epitaxy (MOVPE) and non-catalytic, template-free hydride metal-organic vapor phase epitaxy (H-MOVPE) on Si, GaN, and c-Al2O3 substrates. Dislocation-free, high-quality InN nanorods with [00.1] growth axis were formed via an apparent vapor-solid (VS) growth mechanism by H-MOVPE. On a contrary when conventional MOVPE was employed InN nanowires were grown via vapor-liquid-solid (VLS) mechanism. The controlled growth of self-seeded III-Nitride nanostructured materials has been demonstrated.