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Thin polycrystalline ZnO films are deposited onto Si (100) substrates by means of DC reactive sputter deposition from a Zn target in an argon–oxygen mixture. The influences of the oxygen content in the mixture and of the total gas pressure in the reactor during deposition as well as of applying postgrowth annealing in an oxygen flow at elevated temperatures on the structural, chemical, and electrical properties of the obtained films are discussed. Three types of thin‐film structures were obtained: a porous polycrystalline Zn layer, a porous polycrystalline ZnO layer and a dense ZnO film. The porous Zn layer grew at oxygen content less than 33% and upon annealing in an oxygen flow at 400, 600, and 800 °C transformed to porous polycrystalline ZnO films. For oxygen contents ≥33% the obtained films were dense and polycrystalline with a 00.2 dominating orientation. X‐ray diffraction (XRD), scanning electron microscopy (SEM), Rutherford backscattering spectroscopy (RBS), and Hall effect measurements were applied to characterize the obtained films.

The interaction of interstitial Copper (Cui) with substitutional platinum impurities (Pts) in n‐type FZ silicon wafers is studied by deep level transient spectroscopy (DLTS) and Laplace DLTS. Copper is introduced into silicon, which is Pt doped during growth, using chemo‐mechanical polishing (CMP) at room temperature in a copper‐contaminated slurry. After the CMP process, four new levels i.e., E80, E131, E147, and E271 are observed. These levels are only observed in Pt‐doped samples. From an analysis of the depth profiles of the new levels, it is ruled out, that the levels belong to different charge states of the same defect. The sum of concentrations of all depth profiles give a constant concentration of about 3 × 1014cm−3, which corresponds to the total PtSconcentration in the samples. Therefore, the new levels are attributed to several different defects which contain one substitutional Pt and several (1–4) interstitial Cu atoms. Cu is introduced into n‐type Si at room temperature from a polishing slurry. Interstitial Cu is shown to create new defects with a substitutional Pt. The electrical parameters of the defects are determined and tentatively identied with complexes of one substitutional Pt atom and n= 1 to 4 interstitial Cu atoms (PtS(Cui)n).