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CuInSe2thin films are prepared on Mo-coated glass substrates by pulse-plated electrodeposition from an aqueous solution including CuCl2, InCl3and SeO2. Film deposition with a stoichiometric composition and a smooth surface has been achieved by the control of the applied pulses with a duty cycle ? of 33% and a cathode potential during on-time of -0.7 V vs the saturated calomel electrode (SCE). The deposited films are annealed in nitrogen gas to be crystallized. The optimum annealing conditions have been determined using X-ray diffraction and Raman spectra measurement as: annealing temperature of 400°C, and annealing duration of 90 min.

The chemical vapor-deposited homoepitaxial (111) diamond surface is studied by reflection high-energy electron diffraction (RHEED). The obtained diffraction patterns showed the presence of anti-phase domain ordering of 2×1 surface unit cells. The anti-phase boundary was determined to be <110>.