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The variable presence of adrenal insufficiency (AI) due to hypocortisolemia (HC) in patients with thalassemia is well established; however, the prevalence of adrenocortical hypofunction (ACH) in the zona glomerulosa and zona reticularis of the adrenal cortex is unknown. To establish the prevalence of ACH, we examined the cortisol response to 1-µg and 250-µg ACTH tests, plasma aldosterone (A)/plasma renin activity (PRA) ratio, and serum dehydroepiandrosterone sulfate (DHEAS) levels in a large cohort of patients with thalassemia, and to investigate the impact of total body iron load (TBIL) on adrenocortical function. The setting used was University hospital and government-based tertiary care center. One hundred twenty-one (52 females) patients with β-thalassemia major (β-TM) and 72 healthy peers (38 females) were enrolled. The patients underwent a 250-µg cosyntropin test if their peak cortisol was <500 nmol/L in a 1-µg cosyntropin test. Magnetic resonance imaging (MRI) was performed to assess the MRI-based liver iron content and cardiac MRI T2* iron. The associations between ACH and TBIL were investigated. The patients with thalassemia had lower ACTH, cortisol, DHEAS, and A/PRA values compared with the controls (p< 0.001). Thirty-nine patients (32.2 %) had HC [primary (n= 1), central (n= 36), combined (n= 2)], and 47 (38.8 %) patients had reduced DHEAS levels; 29 (24.0 %) patients had reduced A/PRA ratios. Forty-six (38.0 %) patients had hypofunction in one of the adrenal zones, 26 (21.5 %) had hypofunction in two adrenal zones, and 9 (7.4 %) had hypofunction in all three zones. Patient age and TBIL surrogates were significant independent parameters associated with ACH. Cardiac MRI T2* iron was the only significant parameter that predicted the severity of ACH at a cut-off of 20.6 ms, with 81 % sensitivity and 78 % specificity. Patients with thalassemia have a high prevalence of AI due to HC and zona glomerulosa and zona reticularis hypofunction. TBIL surrogates can predict ACH, but cardiac iron was the only surrogate that was adequately sensitive to predict the severity of ACH.

The purpose of this study was to compare the total oxidant and antioxidant effect of different oral iron preparations in children with iron-deficiency anemia (IDA).

Extreme ultraviolet lithography (EUVL) sources emit a broad spectrum of wavelengths ranging from EUV to DUV and beyond. If the deep ultraviolet (DUV) reaches the wafer it will affect imaging performance by exposing the photoresist. Hence it is critical to determine the amount of DUV out of band (OoB) present in a EUVL tool, as well as its effect on the printed features on the wafer. In this study we investigate the effect of DUV OoB in EUVL. A model is developed in order to be able to quantify the DUV/EUV ratio at wafer level and all the required input parameters are estimated in the range from 140 to 400nm, as well as for the EUV at 13.5nm. The transmission of the optical system was estimated based on the optical design and reflectivity measurements of the mirrors. The mask reflectivity for multilayer (ML) and absorber was measured at wavelengths down to 140 nm and for EUV. The sensitivity to EUV and DUV for a variety of resist platforms was measured at 13.5 nm, 157 nm, 193 nm, 248 nm and 365 nm. The source spectra were also measured. By using these inputs, it was possible to estimate the DUV/EUV ratio for two different ASML tool configurations, the EUV Alpha Demo Tool and the NXE:3100. Both NXE:3100 with LPP (laser produced plasma) source and Alpha Demo Tool with DPP (discharge produced plasma) source show less than 1% DUV/EUV ratio in resist. The modeling predictions were compared to experimental results. A methodology is introduced to measure the DUV/EUV ratio at wafer level in situ. With this aim, an aluminum coated mask was fabricated and its reflectivity was qualified in both EUV and DUV wavelength range. By comparing the dose to clear exposures of a reflective blank and of the aluminum mask, it is possible to quantify the DUV/EUV ratio. The experimental results are in order of magnitude agreement with modeling predictions. The proposed experimental approach can be used to benchmark the DUV sensitivity of different resist platforms and may be used to monitor DUV OoB.