1. Temperature effect of ion beam mixing at Au-Si〈111〉 interfaces
- Author
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Yupu, Li, Peixuan, Wang, Jian, Chen, Jiarui, Liu, Qichu, Zhang, and Changqing, Qiu
- Abstract
Ar ion beam induced mixing at Au-Si〉111〈 interfaces has been studied as a function of the temperature from 77 up to 573 K. The temperature dependence of intermixed Si atoms is different from the temperature dependence in the other systems such as Ni-Si, Mo-Si, Co-Si, Cr-Si and Nb-Si. The temperature affects the uniformity and phase structure of the mixed layers. Amorphous and the metastable crystalline phases with a composition close to Au49Si51(≈AuSi) layers have been obtained. There is an amorphous (damaged) Si layer behind the mixed layer as seen by cross-sectional transmission electron microscopy.
- Published
- 1990
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