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We study the neutron electric dipole moment in the presence of the CP-violating operators up to dimension five in terms of the QCD sum rules. It is found that the operator product expansion calculation is robust when exploiting a particular interpolating field for a neutron, while there exist some uncertainties on the phenomenological side. By using input parameters obtained from the lattice calculation, we derive a conservative limit for the contributions of the CF-violating operators. We also show the detail of the derivation of the sum rules. [ABSTRACT FROM AUTHOR]

Al-induced crystallization of an amorphous Si (a-Si) thin film in a polycrystalline Al/native SiO2/a-Si structure has been investigated on an atomic level using cross-sectional high-resolution transmission electron microscopy. A 7-nm polycrystalline Al layer was thermally deposited onto a 50-nm a-Si thin film, deposited by low-pressure chemical vapor deposition and covered with a 2.2-nm layer of native SiO2. The a-Si thin film in this structure was partially crystallized at 250°Cand completely crystallized at 500°C after 30 min. Lattice fringes of Si(111) were observed in the original Al layer and interfacial native SiO2layer after the annealing process. From the above results, it was concluded that Al-induced crystallization of the a-Si thin film occurred by interdiffusion of Al and Si atoms through the native oxide layer even though the 2.2-nm native SiO2layer was not removed completely at the Al/a-Si interface. A possible model, that can be used to explain the Al-induced crystallization phenomena by taking into account the changes that take place within or near the native SiO2layer during the annealing process, was proposed.