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We report on the formation of novel turbulent coherent structures in a long cavity semiconductor laser near the lasing threshold. Experimentally, the laser emits a series of power dropouts within a roundtrip, and the number of dropouts per series depends on a set of parameters including the bias current. At fixed parameters, the drops remain dynamically stable, repeating over many roundtrips. By reconstructing the laser electric field in the case where the laser emits one dropout per roundtrip and simulating its dynamics using a time-delayed model, we discuss the reasons for long-term sustainability of these solutions. We suggest that the observed dropouts are closely related to the coherent structures of the cubic complex Ginzburg–Landau equation.

We present a new material pairing that can be used to realize high-contrast gratings at wavelengths of 10 μm and greater. Using only optical lithography, the material pair solves the absorption issue limiting the popular Si/SiO_2 pairing from operation above 6 μm. We describe the obstacles that exist with the currently used grating materials for this wavelength range and outline why our chosen materials overcome this obstacle. We numerically demonstrate that gratings utilizing these materials are capable of wideband high reflectivity. We experimentally show that the spectral response of gratings that are fabricated using such a process show good agreement with theoretically predicted performance.

A low-cost and portable optical chemical sensor based ammonia sensing system that is capable of detecting dissolved ammonia up to 5 ppm is presented. In the system, an optical chemical sensor is designed and fabricated for sensing dissolved ammonia concentrations. The sensor uses eosin as the fluorescence dye which is immobilized on the glass substrate by a gas-permeable protection layer. A compact module is developed to hold the optical components, and a battery powered micro-controller system is designed to read out and process the data measured. The system operates without the requirement of laboratory instruments that makes it cost effective and highly portable. Moreover, the calculated results in the system can be transmitted to a PC wirelessly, which allows the remote and real-time monitoring of dissolved ammonia.

An all-optical switching mechanism via optical injection of an InAs/GaAs quantum dot laser is presented. Relative state suppression in excess of 40 dB is achieved, and experimental switching times of the order of a few hundred picoseconds are demonstrated.

We demonstrate high aperture (up to NA∼0.64) three-dimensional focusing in free space based on wavefront-engineered diffraction gratings. The grating lens’ optical response is tailored by spatially varying the grating ridge and groove width in two dimensions to achieve focal lengths of order 100 μm that are crucial for micro-optical applications. The phase profile of the lens includes multiple 2π phase jumps and was obtained by applying an algorithm for finding the optimal path for both phase and amplitude. Experimental measurements reveal a lateral spot size of 5 μm that is close to the size of a corresponding Airy disk.

One of the most significant features in the optically injected laser system is the modification of the damping of the relaxation oscillations. We derive an analytic expression for the nonlinear modification to this important laser parameter and calculate various quantities of interest using the result. In particular, this leads to a novel method to experimentally determine the free-running damping. The variation of the effective damping with detuning also explains the marked detuning dependence of the form of excitable pulsations in optically injected semiconductor lasers.

Abstract: We focus on the optimization of SiGe material deposition, the minimization of the parasitic capacitance of the probe pads for high speed, low voltage and high contrast ratio operation. The device fabrication is based on processes for standard Si electronics and is suitable for mass-production. We present observations of quantum confinement and quantum-confined Stark effect (QCSE) electroabsorption in Ge quantum wells (QWs) with SiGe barriers grown on Si substrates. Though Ge is an indirect gap semiconductor, the resulting effects are at least as clear and strong as seen in typical III-V QWstructures at similar wavelengths. We also demonstrated a modulator, with eye diagrams of up to 3.5 GHz, a small driving voltage of 2.5 V and a modulation bandwidth at about 10 GHz. Finally, carrier dynamics under ultra-fast laser excitation and high-speed photocurrent response are investigated.

Fabry-Perot InAs quantum-dot lasers grown on GaAs substrates are mutually coupled with a delay of several nanoseconds. Stable phase-locked output with narrow linewidth is obtained when the frequency detuning between the two lasers is less than 4 GHz. This simple locking scheme could find application in a variety of photonics applications.

We propose a delay-differential equation to model dynamical instabilities in a quantum dot laser. We focus on a laser with a small gain section and a long empty section. A long cavity reduces the strong damping of the relaxation oscillation frequency. It leads to the appearance of dropouts at the delay period, which evolve to chaos.

This publisher’s note contains corrections to Opt. Lett.45, 4903 (2020)OPLEDP0146-959210.1364/OL.397840.

We have analyzed pulse width and timing jitter in passively mode-locked two-section InAs quantum-dot lasers emitting at 1310 nm and have identified two distinct, extensive mode-locked regions with robust short pulses and low timing jitter. A record combination of 2 ps pulses and 25 fs/cycle timing jitter (500 fs, 1-100 MHz), with 1 mW average output power per facet, is demonstrated.

We study the feedback-induced instabilities in a quantum dot semiconductor laser emitting in both ground and excited states. Without optical feedback the device exhibits dynamics corresponding to antiphase fluctuations between ground and excited states, while the total output power remains constant. The introduction of feedback leads to power dropouts in the ground state and intensity bursts in the excited state, resulting in a practically constant total output power.

Owing to a production error, Eq. (1) in Opt. Lett.38, 3410 (2013) was not properly rendered. That error is corrected here.