1. Insulating SiO2under Centimeter-Scale, Single-Crystal Graphene Enables Electronic-Device Fabrication
- Author
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Guo, Hui, Wang, Xueyan, Huang, Li, Jin, Xin, Yang, Zhenzhong, Zhou, Zhang, Hu, Hai, Zhang, Yu-Yang, Lu, Hongliang, Zhang, Qinghua, Shen, Chengmin, Lin, Xiao, Gu, Lin, Dai, Qing, Bao, Lihong, Du, Shixuan, Hofer, Werner, Pantelides, Sokrates T., and Gao, Hong-Jun
- Abstract
Graphene on SiO2enables fabrication of Si-technology-compatible devices, but a transfer of these devices from other substrates and direct growth have severe limitations due to a relatively small grain size or device-contamination. Here, we show an efficient, transfer-free way to integrate centimeter-scale, single-crystal graphene, of a quality suitable for electronic devices, on an insulating SiO2film. Starting with single-crystal graphene grown epitaxially on Ru(0001), a SiO2film is grown under the graphene by stepwise intercalation of silicon and oxygen. Thin (∼1 nm) crystalline or thicker (∼2 nm) amorphous SiO2has been produced. The insulating nature of the thick amorphous SiO2is verified by transport measurements. The device-quality of the corresponding graphene was confirmed by the observation of Shubnikov-de Haas oscillations, an integer quantum Hall effect, and a weak antilocalization effect within in situfabricated Hall bar devices. This work provides a reliable platform for applications of large-scale, high-quality graphene in electronics.
- Published
- 2020
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