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A possibility of monolayer-stepped GaInAs/InP multiple quantum wells was demonstrated by metalorganic molecular beam epitaxy (MOMBE). The 4.2 K PL spectra of these structures showed quantized energy shift which increased stepwise with decreasing growth time of the GaInAs well. The maximum energy shift was 0.467 eV for GaInAs growth time of 3 s, and the energy shift corresponded to 2-monolayer GaInAs quantum wells, by contrast with the calculated energy shift.