1. Fatigue of NbOx-Based Locally Active Memristors—Part I: Experimental Characteristics
- Author
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Ding, Yanting, Li, Yu, Jia, Shujing, Chen, Pei, Zhang, Xumeng, Wang, Wei, Li, Yang, Hao, Yunxia, Bi, Jinshun, Gong, Tiancheng, Jiang, Hao, Wang, Ming, Liu, Qi, Xu, Ningsheng, and Liu, Ming
- Abstract
NbOx-based devices exhibit intriguing promise for beyond-CMOS applications due to their dynamic threshold switching (TS) and negative differential resistance (NDR) behaviors. However, an in-depth study on the degradation scheme of such a device is absent. In this work, we investigate the degradation behavior, i.e., the shift of switching voltages (
${V}_{\text {th}}$ ${V}_{\text {hold}}$ - Published
- 2023
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