1. Evaluation and MHz Converter Application of 1.2-kV Vertical GaN JFET
- Author
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Yang, Xin, Zhang, Ruizhe, Yang, Qiuzhe, Song, Qihao, Litchford, Everest, Walker, Andy J., Pidaparthi, Subhash, Drowley, Cliff, Dong, Dong, Li, Qiang, and Zhang, Yuhao
- Abstract
The 1.2 kV vertical GaN fin-channel junction field-effect transistor (JFET) is an emerging industrial device with low specific
on -resistance (RON ), normally-off operation, and avalanche capability. This article reports the first comprehensive evaluation of 1.2 kV, 75 mΩ gallium nitride (GaN) JFET in converter applications. The RC-interface gate driver is optimized through the double-pulse test (DPT). To quantify the device's conduction loss, an in-situ measurement of dynamic RON is performed in a continuous DPT at steady-state. The vertical GaN JFET shows no dynamic RON issue. Subsequently, a GaN JFET-based half bridge is evaluated in a zero-voltage-switching (ZVS) buck converter under various frequencies, duty cycles, and load conditions. For comparison, similarly-rated SiCmosfet and Si IGBT are tested in the same converter. Benefitting from the lowest output capacitance and output charge, the GaN JFET requires a short deadtime and enables MHz operation in the 800-V ZVS buck converter. The GaN converter achieves a maximum efficiency of 97.7% at 1 MHz and 98.0% at 500 kHz and shows a general advantage in frequency and efficiency compared to the same converters based on SiCmosfet and Si IGBT. In addition, under the operational driver condition, the 1.2 kV GaN JFET shows a long short-circuit withstanding time of over 40 μs at 800 V. These results provide key reference for the application of 1.2 kV GaN JFETs and suggest that a GaN device with proper designs can achieve excellent stability and robustness.- Published
- 2024
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