1. Quantum transport in WSe2/SnSe2 tunneling field effect transistors with high-k gate dielectrics.
- Author
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Guo, Hailing, Zhang, Zhaofu, Shao, Chen, Yu, Wei, Gui, Qingzhong, Liu, Peng, Zhong, Hongxia, Cao, Ruyue, Robertson, John, and Guo, Yuzheng
- Subjects
TUNNEL field-effect transistors ,DIELECTRIC materials ,FIELD-effect transistors ,TITANIUM dioxide ,ELECTRON tunneling - Abstract
• WSe 2 /SnSe 2 TFET with TiO 2 dielectric exhibits on-state current of 1560 μA/μm. • High- k gate dielectric materials lead to a decline in tunneling length. • The underlap structure leads to a reduction in on-state current. • Combination of heterostructures with high- k gate dielectric materials is an effective way of improving TFET performance. Combining two-dimensional materials and high- k gate dielectrics offers a promising way to enhance the device performance of tunneling field-effect transistor (TFET). In this work, the device performance of WSe 2 /SnSe 2 TFET with various gate dielectric materials is investigated based on quantum transport simulation. Results show that TFETs with high- k gate dielectric materials exhibit improved on-off ratio and enhanced transconductance. The optimized WSe 2 /SnSe 2 TFET with TiO 2 gate dielectrics achieves an on-state current of 1560 μA/μm and a subthreshold swing (SS) of 48 mV/dec. The utilization of high- k gate dielectric materials results in shorter tunneling length, higher transmission efficiency, and increased electron tunneling probability. The performance of the WSe 2 /SnSe 2 TFET would be affected by the presence of the underlap region. Moreover, WSe 2 /SnSe 2 TFETs with La 2 O 3 dielectric can be scaled down to 3 nm while meeting high-performance (HP) device requirements according to the International Technology Roadmap for Semiconductors (ITRS). This research presents a practical solution for designing advanced logic devices in the sub-5 nm technology node. [Display omitted] [ABSTRACT FROM AUTHOR]
- Published
- 2024
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