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Noise-induced phenomena characterise the nonlinear relaxation of nonequilibrium physical systems towards equilibrium states. Often, this relaxation process proceeds through metastable states and the noise can give rise to resonant phenomena with an enhancement of lifetime of these states or some coherent state of the condensed matter system considered. In this paper three noise induced phenomena, namely the noise enhanced stability, the stochastic resonant activation and the noise-induced coherence of electron spin, are reviewed in the nonlinear relaxation dynamics of three different systems of condensed matter: (i) a long-overlap Josephson junction (JJ) subject to thermal fluctuations and non-Gaussian, Lévy distributed, noise sources; (ii) a graphene-based Josephson junction subject to thermal fluctuations; (iii) electrons in a n -type GaAs crystal driven by a fluctuating electric field. In the first system, we focus on the switching events from the superconducting metastable state to the resistive state, by solving the perturbed stochastic sine-Gordon equation. Nonmonotonic behaviours of the mean switching time versus the noise intensity, frequency of the external driving, and length of the junction are obtained. Moreover, the influence of the noise induced solitons on the mean switching time behaviour is shown. In the second system, noise induced phenomena are observed, such as noise enhanced stability (NES) and stochastic resonant activation (SRA). In the third system, the spin polarised transport in GaAs is explored in two different scenarios, i.e. in the presence of Gaussian correlated fluctuations or symmetric dichotomous noise. Numerical results indicate an increase of the electron spin lifetime by rising the strength of the random fluctuating component. Furthermore, our findings for the electron spin depolarization time as a function of the noise correlation time point out (i) a non-monotonic behaviour with a maximum in the case of Gaussian correlated fluctuations, (ii) an increase up to a plateau in the case of dichotomous noise. The noise enhances the coherence of the spin relaxation process. [ABSTRACT FROM AUTHOR]

The complexity of electron dynamics in low-doped n-type InP crystals operating under fluctuating electric fields is deeply explored and discussed. In this study, we employ a multi-particle Monte Carlo approach to simulate the non-linear transport of electrons inside the semiconductor bulk. All possible scattering events of hot electrons in the medium, the main details of the band structure, as well as the heating effects, are taken into account. The results presented in this study derive from numerical simulations of the electron dynamical response to the application of a sub-Thz electric field, fluctuating for the superimposition of an external source of Gaussian correlated noise. The electronic noise features are statistically investigated by computing the correlation function of the velocity fluctuations, its spectral density and the variance, i.e. the total noise power, for different values of amplitude and frequency of the driving field. Our results show the presence of a cooperative non-linear behavior of electrons, whose dynamics is strongly affected by the field fluctuations. Moreover, the electrons self-organize among different valleys, giving rise to the reduction of the intrinsic noise. This counterintuitive effect critically depends on the relationship among the characteristic times of the external fluctuations and the temporal scales of complex phenomena involved in the electron dynamical response. In particular, the correlation time of the electric field fluctuations appears to be crucial both for the noise reduction effect and the appearance of an anomalous diffusion effect. [ABSTRACT FROM AUTHOR]