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We report on demonstrating high performance lateral b-Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) with source-connected field plate (FP) on a thin (150 nm) and highly Si-doped (n = 1.5 x 1018 cm[?]3) b-Ga2O3 epitaxial channel layer grown by ozone molecular beam epitaxy (MBE) on Fe-doped semi-insulating (010) substrate. For a MOSFET with a gate-drain spacing (Lgd) of 25 um, the three terminal off-state breakdown voltage (VBR) tested in Fluorinert ambient reaches 2321 V. To the best of our knowledge, this is the first report of lateral b-Ga2O3 MOSFET with high VBR of more than 2 kV and the highest VBR attained among all the Ga2O3 MOSFETs. The breakdown voltages with different Lgd from 5-25 um ranged from 518-2321V, with a linear trend of increasing breakdown voltage for larger spacing lateral MOSFETs. Combining with high electrical performances and excellent material properties, source-connected FP lateral b-Ga2O3 MOSFET implies its great potential for next generation high-voltage and high-power switching devices applications above 2 kV.

We report on demonstrating high performance lateral β-Ga2O3metal-oxide-semiconductor field-effect transistors (MOSFETs) with source-connected field plate (FP) on a thin (150 nm) and highly Si-doped (n = 1.5 × 1018cm−3) β-Ga2O3epitaxial channel layer grown by ozone molecular beam epitaxy (MBE) on Fe-doped semi-insulating (010) substrate. For a MOSFET with a gate-drain spacing (Lgd) of 25 μm, the three terminal off-state breakdown voltage (VBR) tested in Fluorinert ambient reaches 2321 V. To the best of our knowledge, this is the first report of lateral β-Ga2O3MOSFET with high VBRof more than 2 kV and the highest VBRattained among all the Ga2O3MOSFETs. The breakdown voltages with different Lgdfrom 5–25 μm ranged from 518–2321V, with a linear trend of increasing breakdown voltage for larger spacing lateral MOSFETs. Combining with high electrical performances and excellent material properties, source-connected FP lateral β-Ga2O3MOSFET implies its great potential for next generation high-voltage and high-power switching devices applications above 2 kV.