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The article "Building a 1965 Heathkit SSB Transceiver Kit in the 21st Century" by Scott Freeberg discusses the process of re-kitting a vintage Heathkit radio, specifically the HW-12 SSB transceiver. The author meticulously disassembles and rebuilds the radio, following the original assembly manual and replacing old components with new ones. The rebuilt radio performs well, allowing the author to make contacts on 75 meters and experience a piece of radio history. The article also mentions the author's project of re-kitting a matching HP-23 power supply to complete the vintage station. [Extracted from the article]

The article focuses on the versatile applications of the tinySA Ultra 6 GHz spectrum analyzer, exploring its use in filter response and return loss measurements for ham radio purposes. It author discusses the setup with a broadband noise source and a directional coupler, sharing practical tips and detailing how the analyzer helped solve a second harmonic problem in a 6-meter transverter.

Saelig has introduced the Elite RF DAx and DBx Amplifiers for EMC testing applications, offering power levels from 20W to 2000W. These solid-state amplifiers cover popular spectrum ranges used in test labs worldwide and are housed in rack-mount cases for easy installation. Amplifiers play a crucial role in EMC testing, particularly in radiated immunity tests, where they create high field strengths to assess a device's resilience to electromagnetic interference. Contact Saelig for assistance in selecting the right amplifier for specific needs. [Extracted from the article]

As appealing as getting DOCSIS 4.0 right away sounds, operators don't want to waste time and money to take apart and rebuild their entire network. [ABSTRACT FROM AUTHOR]

The article highlights the SPL TELE Group and its sister company electrify, focusing on telecommunications, broadband expansion, and sustainable energy management. Electrify, created to meet the demand for high-quality consulting in renewable energy, has pioneered advancements in photovoltaics, charging infrastructure, and battery storage, showcased by the THOR carport, a roofless structure using bifacial PV modules for energy generation, offering climate-friendly solutions.

The article presents the discussion on BMF wanting Austria with the broadband billion by 2030 nationwide with gigabit-capable Supplying connections. Topics include looking at the cyber crime tactical reality being increasing sharply in almost all areas; and internet communication, procedures, processes being developed into the latest war domain to use digitization.

A wideband CMOS low-noise amplifier (LNA) with multiple resonant frequencies is demonstrated in this article. A common source (CS) with inductive degeneration topology is widely employed in LNA circuit design to decouple the input impedance from the noise figure (NF). Since CS with inductive degeneration topology only achieves a single resonant frequency, it generally has narrow bandwidth performance. Through impedance transformation analysis of the matching circuit, a shunt resonator combined with inductive degeneration topology employed for input impedance transformation is carefully constructed to form multiple resonant frequencies. By placing resonant frequencies further apart from each other, impedance fluctuations within a wideband frequency range can be alleviated. In addition, the noise performance of this topology is the same as that of a conventional CS source-degenerated structure. The proposed LNA for the whole K/Ka Band is implemented in a commercial 65-nm CMOS process. It occupies 0.28 mm2. Under a 1.0 V voltage supply, the LNA achieves 3-dB gain bandwidth of 28 GHz from 16.5 GHz to 44.5 GHz. Within the whole 3-dB bandwidth, the gain is larger than 15.5 dB, the NF is less than 4.8 dB with a minimal value of 2.72 dB, and the input 1-dB gain compression point (IP1dB) varies from −24 dBm to −12 dBm. [ABSTRACT FROM AUTHOR]

In this paper, a low complexity moving average nested generalized memory polynomial model (MAN-GMP) is proposed for digital predistortion (DPD) of broadband power amplifiers (PAs). As the signal bandwidth increases drastically, the strong nonlinear distortions, especially those induced by the memory effect, are generated from the highly efficient PAs. To compensate for the strong memory effect, a moving average nested envelope memory polynomial (MAN-EMP) model is derived from an accuracy-enhanced GMP model, which offers reduced complexity while suffering from degraded modeling accuracy. The MAN-GMP model is further proposed to improve the modeling accuracy by connecting several memory branches of the MAN-EMP model in parallel. An iterative algorithm is designed to extract the model coefficients efficiently through only one or two iterations. Experimental measurements are carried out on two sub-7 GHz broadband GaN Doherty PAs with up to 200 MHz bandwidth OFDM signals to benchmark the proposed MAN-GMP model against the GMP, the parallel-LUT-MP-EMP (PLUME), the augmented complexity-reduced GMP (ACR-GMP), the generalized twin-nonlinear two-box (GTNTB), and the enhanced Wiener models. The experimental results show that the MAN-GMP model can effectively compensate for the nonlinear distortion of broadband PAs with significant complexity reduction. [ABSTRACT FROM AUTHOR]

The article presents the discussion on White House was so tickled with this support that it's been calling the bill the "Bipartisan Infrastructure Law." Topics include injustice with a $65 billion investment in building broadband infrastructure for underserved communities; and Telecommunications Act of1996, which Clinton signed, allocated billions to upgrading Internet service for all.

In this paper, a broadband receiver front end for 0.1 to 40 GHz application, fabricated using 0.15-μm GaAs E-mode pHEMT process, is reported. The receiver front end consists of a broadband low-noise amplifier (LNA) and a broadband mixer. To achieve low noise and significant bandwidth extension, a three-stage LNA, cascading one stage cascode amplifier with feedback and bandwidth extension techniques, to two stage cascode Darlington amplifiers with feedback, is proposed. The bandwidth extension principles of LNA are analyzed theoretically and verified experimentally. Measurement results show that the proposed LNA exhibits an average gain of 23.7 dB with ± 1.5-dB variation, a typical noise figure of 3.8 dB, maximum OP1dB of 8.7 dBm in the frequency range from 0.1 to 40 GHz. A symmetric distributed drain mixer (SDDM) is proposed to provide broad bandwidth while ensuring an IP1dB of up to 5.8 dBm. The design procedure of SDDM is presented in detail. Experimental results indicate that the SDDM features a less than 7-dB conversion loss, an IP1dB of up to 5.8 dBm with zero dc dissipation and better than 15-dB isolation of LO-to-RF and IF-to-RF ports from 0.1 to 40 GHz. Finally, the LNA and SDDM are integrated as a 0.1 to 40-GHz receiver front end. Measurements illustrate that the receiver front end shows good matching with better than 10-dB return loss at RF and LO ports, and larger than 15-dB conversion gain in 0.1 to 40-GHz frequency range. The receiver occupies only 1.89-mm2 chip area including test pads. To the best of the authors’ knowledge, the designed receiver front end has the widest bandwidth among reported receivers fabricated by using GaAs process. [ABSTRACT FROM AUTHOR]

IN THE MAY 2002 ISSUE OF THIS MAGAZINE, THE LATE Lester F. Eastman and Umesh K. Mishra made the case for what was then a long-shot technology in the world of power semiconductors: gallium nitride (GaN). They presented an optimistic outlook for powerful, rugged radio-frequency amplifiers in the then-nascent broadband wireless networks and in radar, as well as in power-switching applications for the electric grid. They called GaN devices “the toughest transistor yet.” [ABSTRACT FROM AUTHOR]

This work is focused on the design of broadband amplifiers by exploiting dissipative reciprocal matching networks. Unlike the classical approach, which makes use of lossless reciprocal matching networks, there is no need to trade-off the gain flatness with the input/output matching levels. In this contribution the flat gain condition is obtained partially by exploiting the mismatch loss at a certain section and partially by leveraging on ohmic losses. In particular, two different matching schemes have been analytically studied. Taking advantage of the more promising scheme of the two presented, the design of a linear power amplifier operating over the 4–40 GHz decade, is illustrated. The amplifier showed measured input/output return loss better than 9/10 dB respectively, a gain of 8 ± 0.6 dB and an output power level of 25.5 ± 0.5 dBm at 1 dB compression point. Incidentally, unconditional stability is obtained without considering additional stabilization networks or components devoted to the purpose. [ABSTRACT FROM AUTHOR]

This article presents a 22–47 GHz wideband low-noise amplifier (LNA) with coupled L-type interstage matching inductors. The coupled inductors extend the bandwidth of LNA by moving zeros to lower frequencies to cancel the effect of poles. Meanwhile, asymmetric L-type inductors with different inductances can be designed separately to achieve better gain flatness. In addition, the quality factor of coupled inductors is also slightly improved without significantly changing their inductance. The LNA is fabricated in a 0.13- $\mu \text{m}$ SiGe BiCMOS technology, and it occupies a core area of 0.13 mm2. The LNA achieves a peak gain of 22.2 dB with the 3dB bandwidth of 22–47 GHz (fractional bandwidth up to 72.5%). The measured NF varies between 3.0 and 4.3 dB from 22 to 47 GHz. The measured input 1-dB gain compression point is stable from −23.9 to −22.6 dBm in the entire 3-dB gain bandwidth. The chip consumes a total power of 9.5 mW from a 1.2 V supply. [ABSTRACT FROM AUTHOR]

A new low-voltage and low-power noise-cancelling method that employs the local feedback $g_{m}$ -boosting and balanced loads is proposed by developing a design for a low-noise and low-power balun-low-noise amplifier (LNA) for low-power broadband applications. A common-gate (CG) – common-source (CS) balun-LNA with a modified current-bleeding (CBLD) technique has low noise performance and differential balanced output but consumes more power. Because local feedback boosts the overall $g_{m}$ of the CG stage using the amount of loop gain, the current consumption and supply voltage requirements can be mitigated. In addition, the cross-coupled cascode stage acts as a differential current balancer to improve the gain and phase mismatches at the differential output. Implemented in a 65-nm CMOS technology, the balun-LNA achieves a noise figure of 2.3 - 3 dB, a maximum voltage gain of 27.5 dB and a $S_{11}$ of less −10 dB over the frequency range of 50 MHz to 1.3 GHz. The measured OIP3 and OIP2 are 25.3 dBm and 45.3 dBm, respectively. It consumes 5.7 mA from a nominal supply voltage of 1 V while the active die area is 0.046 mm2. [ABSTRACT FROM AUTHOR]

In this paper, we present a design technique for broadband fully integrated GaN power amplifiers (PAs), with merged bandpass filter (BPF) and AM-PM compensation. The minimum-inductance BPF structure is used as the output matching network of the PA. A new theory of the minimum-inductance BPF is developed and it is shown that, compared to the standard BPF, it can be implemented using lower total inductance and provide higher out-of-band attenuation. Furthermore, using a two-transistor architecture, an AM-PM compensation technique is proposed where compressive and expansive nonlinearity profiles of the transistors’ transconductance and gate-source capacitance are combined to achieve a linear total transconductance and input capacitance, over a wide power range. A fully integrated PA prototype, implemented in a 0.25- $\mu \text{m}$ GaN-on-SiC process with 28-V supply, provides 35.1–38.9dBm output power, 45–61% drain efficiency (DE), 40–55% power-added efficiency (PAE), and 11.3–13.4dB power gain, across 2.0–4.0GHz. For a 256-QAM signal with 7.2-dB PAPR and 100-MHz bandwidth at 2.4GHz, it achieves 2.5% (−32.0dB) rms error vector magnitude (EVM $_{{\mathrm {rms}}}$) and −37.5/−37.6dBc adjacent channel leakage ratio (ACLR), while average output power and DE/PAE are respectively 30.1dBm and 20.6/19.5%, without predistortion. EVM $_{{\mathrm {rms}}}$ and ACLR can be improved to 0.5% (−46dB) and −46.4/−46.8dBc by using digital predistortion (DPD). [ABSTRACT FROM AUTHOR]

A novel quantitative design method is proposed herein for a 120-GHz 8-stage broadband amplifier using the stagger tuning technique. The pole frequencies of the unit amplifiers are determined by the parasitic capacitors and the size of the matching inductors, and resonance peaks are formed at the pole frequency. We proposed the stagger tuning technique at two different frequencies, where an inductance of four stages is chosen to match the pole frequency at a lower frequency (fL) and an inductance of the other four stages is chosen for the upper frequency (fH). With this technique, the maximum bandwidth can be achieved with the given amplifier gain. Moreover, it was shown that the amplifier designed with stagger tuning at two different frequencies yielded the lowest noise figure in the target band because the gain was concentrated in the target band. A 120-GHz 8-stage amplifier is designed with the proposed technique and fabricated using 40-nm CMOS technology. The measured peak gain of the amplifier is 20.6 dB, and the 3-dB bandwidth is 40.6 GHz while consuming 45-mW of dc power. [ABSTRACT FROM AUTHOR]

In this paper, a design methodology for SiGe HBT-based low-noise amplifiers (LNAs) is proposed that can be utilized for both sub-1-dB noise figure (NF) and wide bandwidth as an alternative to the conventional simultaneous input noise and power matching technique. This paper focuses on the removal of the series base inductor and the inclusion of an output matching network as a design parameter that can be used to achieve both sub-1dB NF and wide bandwidth. The effects of the mentioned design parameters on NF and bandwidth are described and analyzed, including the comparison of results with the conventional design technique. To demonstrate the validity of the analysis and impact of utilizing base-to-collector capacitance on LNA performance metrics, two different LNAs implemented in a 0.13- $\mu \text{m}$ SiGe technology. The first LNA achieves a lower than 1-dB NF with 26-dB gain at 8.5 GHz, and the second LNA exhibits wideband operation, with a better than 10-dB return losses in the range of 8–35 GHz and lower than 3-dB NF from 6 to 20 GHz. The sub-1-dB LNA reaches −17.3 dBm of input-referred compression point (IP1dB), with a power consumption of 62 mW and an area of 0.795 mm2. The wideband LNA achieves 17.6 dB of peak gain with a 48.5-mW power consumption and 0.69-mm2 chip area. To the best of our knowledge, this paper achieves the best NF performance in the literature utilizing a SiGe technology, while the wideband LNA exhibits the best operational bandwidth, together with a reasonable low-noise performance. [ABSTRACT FROM AUTHOR]

A new signal-processing approach aimed at improving the intermodulation performance of wideband receivers implemented in CMOS technologies is described. The receiver operates by downconverting an input signal to $N$ decimated baseband signals. The local oscillator signals used in this process are each a different phase of a pseudo-random bit sequence of length $N$. The baseband signals are amplified and digitized before the original RF signal is reconstructed in the digital domain. The operating principles of the system are described and the performance specifications of this system are studied using a combination of analytical and numerical techniques. A prototype integrated circuit has been designed and fabricated using a 130-nm CMOS process. Detailed measurements demonstrating the narrowband and wideband operation of the system are presented and compared to theory. The measured in-band $IIP3$ has been found to be greater than 5.7 dBm from 40 to 300 MHz. The blocker tolerance of the circuit has also been characterized and it was found that a 10-MS/s −50-dBm 16-QAM signal could be received with nearly constant error-vector magnitude as the power of an in-band blocker signal was swept from −20 to −7 dBm. [ABSTRACT FROM AUTHOR]

A common source RF amplifier can be designed to be either power or conjugately matched at the output but not both, since the required load impedances are distinct. In this paper, we have shown that using a drain-gate feedback network brings the power and conjugate match impedances closer together, up to a point where they coincide at a cost of slightly decreased efficiency. We have thoroughly analyzed the output power, return loss, and efficiency tradeoffs and developed a complete design methodology. As a design example, a broadband feedback class-A amplifier has been designed and fabricated in a 130-nm RFCMOS process. The amplifier achieves 7-dBm peak output power and maximum power efficiency of about 20% in the frequency range from 6 to 9 GHz. Input and output return losses are better than 8.5 and 9.5 dB, respectively. [ABSTRACT FROM AUTHOR]

This paper presents a CMOS broadband millimeter wave power amplifier (PA) based on magnetically coupled resonator (MCR) matching network. The MCR matching network is analyzed theoretically. Design method for MCR-based broadband PA is proposed. For the PA’s output matching network, the inductance ratio should be equal to the load/source resistance ratio to achieve broadband impedance transformation. And the coupling coefficient ( $k$ ) of the MCR can be determined from the no gain ripple condition. Fabricated in 65-nm CMOS process, the PA chip achieves 32.9% peak power added efficiency, 15.3-dBm saturated output power ( $P_{\mathrm {sat}}$ ), and 12.9-dBm output 1-dB compression point ( $P_{\mathrm {1\,dB}}$ ). The fractional bandwidth of the PA is 63.3% from 21.6 to 41.6 GHz, which covers the full Ka-band (26.5 to 40 GHz). [ABSTRACT FROM AUTHOR]

CEO Dan Whalen said ATX plans to focus on producing 1.8 GHz amplifiers at its new plant in Michigan and pump out as many as 500,000 amps each year. [ABSTRACT FROM AUTHOR]

The article reports that the US Defense Advanced Research Projects Agency (DARPA) has awarded a contract to Communications and Power Industries (CPI) for the second phase of the Waveform Agile Radio-frequency Directed ENergy (WARDEN) project to develop high-power RF and microwave amplifiers for future electromagnetic warfare applications.The project seek to generate sufficient electromagnetic radiation to damage or kill enemy electronics via front-door and back-door attacks.

The use of distributed amplifiers may have some potential advantages for the transmission of quantum information through optical fibers. In addition to the quantum noise introduced by the amplifiers, entanglement between atoms in the amplifying media and the optical field corresponds to which-path information that can further reduce the coherence. Here we analyze the effects of decoherence in a phase-insensitive distributed amplifier by using perturbation theory to calculate the state of the entire system including the atomic media. For an initial coherent state, tracing over the atomic states allows the reduced density matrix of the field to be expressed as a mixture of squeezed states with a reduced spread in photon number and an increased phase uncertainty. The amplifier noise and decoherence can be interpreted as being due to entanglement with the environment rather than the amplification of vacuum fluctuation noise. [ABSTRACT FROM AUTHOR]

A new 10/24-GHz monopulse receiver is developed in this paper. The receiver consists of dual-band or broadband circuits such as low-noise amplifiers, a rat-race coupler, a switch, and mixers. These circuits are fabricated by a standard 0.18-\mum CMOS or an integrated passive device (IPD) technology, and are integrated together in a flip-chip form. The overall chip area is 3.8 mm \times 3.6 mm. With power consumption of 90.6 mW, the receiver results in 16.5/6.9-dB gain, 9.2/14.6-dB noise figure, -22.3/-23.7-dBminput P1\ dB, and 23.6/21.5-dB sum/difference amplitude ratio in the 10/24-GHz bands. Moreover, the monopulse measurement also demonstrates \pm 15^\circ angle discrimination in the two bands. To authors' knowledge, this is the first demonstration of an original dual-band CMOS monopulse receiver architecture for angle detection applications. [ABSTRACT FROM AUTHOR]

A frequency-selective, power-to-current (P-I) broadband low-noise amplifier (FS-LNA) is presented. The use of global and/or local feedback in tandem is investigated, where monolithic transformers realize the feedback loops. Superior performance is realized when global and local feedbacks are interwound. A cascode gain stage with a current-to-current positive feedback loop to boost the power gain and a current-to-current negative feedback loop for impedance and/or noise matching is implemented in 90 nm RF-CMOS. The FS-LNA also provides at least 20 dB RF signal rejection at frequencies below the L-band (includes GPS and GSM carriers). The measured gain, noise figure and 1-dB gain compression point of the LNA from 3.5–9.25 GHz are 15\pm 3 ~dB, 2.4 \pm 0.8 ~dB and -17.5 \pm 2.5 ~dBm, respectively. The chip area of the LNA is 0.7\,\times \,0.8 mm^2. The FS-LNA consumes 9.6 mW from a 0.8 V power supply. It is most suitable for sub-1 V single-cell integrated radios and can be used for multiband/multistandard wireless technologies, such as broadband impulse-radio ultra-wideband (IR-UWB) and frequency modulated (FM) UWB. [ABSTRACT FROM AUTHOR]

This paper reports a systematic approach for designing a low noise and low power optical receiver targeting high sensitivity imaging architectures for optical wireless communications. For line of sight tracking in optical wireless communications, a switching matrix is employed between the pixel/photodetector array and the transimpedance (TIA) amplifier. An optimization procedure is introduced to balance various performance parameters in the optical receiver front end when including the effect of the switch. The presented optical receiver consists of a low noise, wideband TIA, where noise and stability are optimized using a series inductor at the input. The TIA is followed by a limiter with offset cancellation and 50 \Omega output buffer capable of 900 mV p-p differential output swing, over the 50 \Omega resistance of the BERTScope. The receiver implemented in the IBM 130 nm CMOS technology, achieves a bit error rate of 10^-12 at 5-Gb/s corresponding to 2.8 \muA current at the input and at 4-Gb/s corresponding to 2.1 \muA input current, in presence of 1 pF input capacitance representing the photodiode. The total power consumption including the on chip 50 \Omega differential output buffer is 68 mW from 1.5 V DC supply. The die area including bonding pads and output buffer is 1106\ \mum\times 895\ \mum. [ABSTRACT FROM PUBLISHER]

The article evaluates several broadband plans including TPG ADSL2+ Unlimited, TPG Naked ADSL2+ 200GB, and Exetel TCV20-200.

Aiming for the simultaneous realization of constant gain, accurate input impedance match, and minimum noise figure over a wide frequency range, the circuit topologies and detailed design of two broadband dual-loop negative feedback power-to-current low noise amplifiers (LNAs) are presented in this paper: 1) a resistive indirect-feedback power-to-current LNA, which requires an active part with two output terminal pairs, and 2) a transformer feedback power-to-current LNA, which requires a transformer in its current feedback path having a high turn ratio with high magnetic coupling. For both LNAs the feedback networks and active part implementations are discussed in detail. It is shown that for this purpose a novel stacked transformer can be realized using only two metal layers. The two LNAs are designed to be implemented in a 0.2 m GaAs p-HEMT technology process to verify the theory presented. Counter measures are applied to deal with the effects of bond wires and the effects of transformer parasitics on the circuit performance are analyzed. Simulation results show that the resistive indirect-feedback power-to-current LNA exhibits a 0.6-0.8 dB noise figure, an input return loss well below dB, a 200 mS voltage-to-current gain (which corresponds to 23 dB power gain for a 50 load) from 0.3 GHz to 4 GHz, a dBm third-order input intercept point (IIP3) and a 23 dBm second-order input intercept point (IIP2) at 2 GHz. It consumes 73 mA current from a 4 V power supply. The transformer-feedback power-to-current LNA achieves a 0.5-0.8 dB noise figure, an input return loss of less than dB, a 22 dB power gain from 0.8 GHz to 4 GHz, and a 0 dBm IIP3 and 22 dBm IIP2 at 2 GHz while drawing 53 mA current from the 4 V power supply. [ABSTRACT FROM PUBLISHER]

In all existing mode-locked lasers, the ultimate limit on the output pulse duration is set by the bandwidth of the gain medium. Yet the technique of coherent mode locking allows one to generate broadband pulses from a laser with a linearly narrowband active medium by exploiting the coherent properties of the amplifier. In this work we numerically demonstrate how to use this technique for the generation of single-cycle pulses directly from a mode-locked oscillator. [ABSTRACT FROM AUTHOR]

This paper presents a general analysis of peaking methods in output stages of amplifiers for broadband communication systems. It is shown that common peaking methods, although providing significant signal bandwidth enhancement ratios (BWER), are limited to 30%–50% of their speed potential by output matching requirements. A modified T-coil peaking is analyzed which enhances both signal bandwidth and output matching frequency range by up to 200% compared to common peaking methods. A broadband amplifier using this inductive output matching with 69-GHz bandwidth implemented in a 0.25~\mu \m SiGe BiCMOS technology is presented to prove the validity of the analysis. [ABSTRACT FROM PUBLISHER]

An improved all-npn broadband highly linear SiGe amplifier is presented. The operation of the proposed amplifier relies on two dependent translinear loops. The frequency response, linearity, input voltage swing range, and noise performance are analyzed. A broadband linear amplifier with 46 dBm OIP3 at 20 MHz, 34 dBm OIP3 at 1 GHz, 6 dB noise figure, and 10.3 dBm output P1\ dB is demonstrated. [ABSTRACT FROM PUBLISHER]

The article offers information on the state of broadband that matters in organizations. It notes that information technology (IT) organizations can benefit by keeping pace with regulatory issues while taking advantage of new technology trends like wireless broadband technology. It adds that companies need better broadband into their offices but worry about quality and costs that offer reliability for telecommuters across time zones.

This paper presents an electrostatic discharge (ESD)- protected ultra-wideband (UWB) low-noise amplifier (LNA) for full-band (170-to-1700 MHz) mobile TV tuners. It features a PMOS-based open-source input structure to optimize the 110 swings under a mixed-voltage ESD protection while offering an inductorless broadband input impedance match. The amplification core exploiting double current reuse and single-stage thermal-noise cancellation enhances the gain and noise performances with high power efficiency. Optimized in a 90-nm 1.2/2.5-V CMOS process with practical issues taken into account, the LNA using a constant-gm bias circuit achieves competitive and robust performances over process, voltage and temperature variation. The simulated voltage gain is 20.6 dB, noise figure is 2.4 to 2.7 dB, and IIP3 is +10.8 dBm. The power consumption is 9.6 mW at 1.2 V. [S11] < -10 dB is achieved up to 1.9 GHz without needing any external resonant network. Human Body Model ESD zapping tests of ±4 kV at the input pins cause no failure of any device. [ABSTRACT FROM AUTHOR]

This paper deals with the design of single-stage differential low-noise amplifiers for ultra-wideband (UWB) applications, comparing state-of-the-art planar bulk and silicon-on-insulator (SOI) FinFET CMOS technologies featuring 45-nm gate length. To ensure a broadband input impedance matching, the gm-boosted topology has been chosen. Furthermore, the amplifiers have been designed to work over the whole UWB band (3.1-10.6 GHz), while driving a capacitive load, which is a realistic assumption for direct conversion receivers where the amplifier directly drives a mixer. The simulations (based on compact models obtained from preliminary measurements) highlight that, at the present stage of the technology development, the planar version of the circuit appears to outperform the FinFET one. The main reason is the superior cutoff frequency of planar devices in the inversion region, which allows the achievement of noise figure and voltage gain comparable to the FinFET counterpart, with a smaller power consumption. [ABSTRACT FROM AUTHOR]

This paper presents a systematic design methodology for broad-band CMOS low-noise amplifiers (LNAs). The feedback technique is proposed to attain a better design tradeoff between gain and noise. The network synthesis is adopted for the implementation of broad-band matching networks. The sloped inter-stage matching is used for gain compensation. A fully integrated ultra-wide-band 0.18-μm CMOS LNA is developed following the design methodology. The measured noise figure is lower than 3.8 dB from 3 to 7.5 GHz, resulting in the excellent average noise figure of 3.48 dB. Operated on a 1.8-V supply, the LNA delivers 19.1-dB power gain and dissipates 32 mW of power. The gain-bandwidth product of the UWB LNA reaches 358 GHz, the record number for the 0.18-μm CMOS broad-band amplifiers. The total chip size of the CMOS UWB LNA is 1.37 × 1.19 mm². [ABSTRACT FROM AUTHOR]

A new technique for designing uniform multistage amplifiers (MAs) for high-frequency applications is introduced. The proposed method uses the multi-peak bandwidth enhancement technique while it employs identical, simple and inductorless stages. The intrinsic capacitances within transistors are exploited by the active negative feedbacks to expand the bandwidth. While all stages of the proposed MA topology are identical, the gain-bandwidth product can be extended several times. Using the proposed topology, a six-stage amplifier in TSMC 0.35-µm CMOS process was designed. Measurement results show that the gain can be varied between 16 and 44 dB within 0.7-3.2-GHz bandwidth with less than S.2-nV/√Hz noise. Die area of the amplifier is 175 µm × 300 µm. [ABSTRACT FROM AUTHOR]

The analysis and design of the two promising candidates for interstage bandwidth enhancement of integrated wide-band cascaded amplifiers (CAs), namely series-shunt (SH) and shunt-series (HS) triple-resonance peaking, are presented. The principal operation of both peaking networks is described qualitatively in time-domain where the inherent bandwidth superiority of SH peaking is revealed. With the help of triple resonance concept, a rigorous and insightful analysis is then given in frequency domain. Analytical equations applicable to both networks have been derived to enable the proper inductance selection and to quantify the bandwidth advantage of SH peaking. In addition, various frequency characteristics of the networks are discussed through the investigation of their triple resonant frequency locations. This is followed by detailed analysis on the important nonidealities due to transistor's gate resistance and inductors' losses. The effectiveness of theoretical analysis is demonstrated via design and simulation of SHCA and HSCA with identical number of stages, gain and power consumption. The results show good agreement between theoretical analysis and simulation where the SHCA outperforms its HS counterpart in bandwidth while other performances are practically identical. [ABSTRACT FROM AUTHOR]

The design and implementation of a baseband wide-band code-division multiple access (WCDMA) dual-antenna mobile terminal system-on-a-chip (SoC) is presented in this paper. Spatial diversity processing mitigates wireless channel impairments and is a key enabling technology for WCDMA to support high quality of service at high data rates and capacity. The SoC integrates the baseband transceiver, coding and decoding functions, microcontrollers to implement the radio access protocols, and external interfaces to communicate with the application layer. The receiver design, which takes advantage of diversity benefits in several blocks, is described in detail. The SoC was fabricated in a 0.18-mum 1.8-V CMOS technology and requires a total area of 72mm2 consuming 532 mW at the maximum data rates. The application-specific integrated circuit was used in lab testing where a gain of up to 9 dB was observed for the dual-antenna receiver, which demonstrates the tremendous improvement provided by spatial diversity. The results presented in this paper provide a base architecture and a performance benchmark for commercial implementations of WCDMA mobile terminals [ABSTRACT FROM PUBLISHER]

The article evaluates several electronic equipment including the K-line series of pressure transmitters from Kistler Instrument, 15S5g7 and 30S5G7 broadband amplifiers from AR Worldwide RF/Microwave Instrumentation and the Time Domain Imaging system from Sonoscan Inc.

A general procedure is presented for noise analysis and optimization in continuous-time operational transconductance amplifier (OTA)-C filters of arbitrary order and topology. Based on a matrix description of a general OTA-C filter structure, universal expressions are derived that permit computing the filter noise and optimizing the noise performance in any OTA-C filter. The results are not only useful for classical (discrete or integrated) OTA-C designs at medium to high frequencies but also in modern radio-frequency integrated circuits (RFICs) by carefully replacing transistors or electronic subcircuits by OTA (macro) models The formulas are easy to implement and are readily included in computer-aided analysis and optimization algorithms. The accuracy of the proposed algebraic method is confirmed by a coma parison with SPICE-simulation results. Two application examples are given: Finding the minimum-noise a multiple-loop-feedback filter configuration to implement fifth-order Butterworth and Bessel transfer functions, and determining the optimal biquad sequencing and gain distribution in a cascade realization of an eighth-order Butterworth filter. [ABSTRACT FROM AUTHOR]

Evaluates electronic equipment and supplies. LT5514 850 megahertz programmable gain, broadband amplifier from Linear Technology; DASYLab software from Omega Engineering; Aluminum cabinets from Optima; PWG series current sense resistor from Alpha Electronics.

The recently published small-signal KAIST model is used successfully to fit the measured RF characteristics of a novel SiGe n-HMODFET device operating at micropower levels and extracted small-signal model parameters for this device under micropower operation are presented here for the first time. This model is then used to predict the performance of a simple micropower amplifier (sub 300-μW total power consumption), realized in SiGe technology, and a comparison of modeled versus measured data is included. [ABSTRACT FROM AUTHOR]

Describes a small wideband distribution amplifier, used to distribute video and other wideband signals to a number of locations around a laboratory or lecture hall. Details on the operations of the amplifier; Information on its performance; Description of the circuit used.

The article offers news briefs in the U.S. as of mid-March 2014. Netflix will pay cable and broadband firm Comcast in order to directly connect to Comcast's network for faster and more dependable access to streaming video by its customers. Citizen Sam Wurzelbacher, also known as Joe the Plumber, was invited by politician John McCain to accompany him in the campaign trail. Democratic Senator Ron Wyden was named as head of the U.S. Senate Finance Committee.

The article evaluates the SPE Expert 2K-FA Solid State Linear Amplifier manufactured by Societa Per l'Elettronica (SPE).

The article presents the news related to Texas. Topics include an analysis by the Food and Environment Reporting Network estimating the cases among farmworkers; public school students lacking broadband access and making virtual learning during the pandemic especially challenging; and Texas leading the country in highest rate and number of uninsured residents.