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The effect of the stacking sequence on magnetic and superconducting properties in La0.67Sr0.33MnO3(LSMO)/YBa2Cu3O7−δ(YBCO) and LSMO/SrTiO3/YBCO heterostructures, which consequently affected the magnetic proximity effect (MPE), was investigated using spin-polarized neutron reflectivity experiments. The results established the intrinsic nature of MPE and its correlation with stacking sequence-dependent magnetic and superconducting properties in these oxide heterostructure systems. We found an increase in the superconducting transition temperature (Tsc) and magnetization for both of the heterostructures as compared to heterostructures with a reversed stacking order. The evolution of the magnetization of the interfacial ferromagnetic (FM) layer, studied as a function of temperature for both heterostructures, showed a decrease in the MPE-induced magnetic depleted layer thickness for heterostructures at a higher Tsc. A comparison of the results of different studies with the present results suggested that the average magnetization and transition temperatures of a FM and a superconductor (SC) were important parameters that dictate the strength of the proximity effect due to the complex interaction of SC and FM in these systems. Tuning the strength of MPE in FM/SC and FM/I/SC oxide heterostructures may provide a promising platform for the effective realization of devices.

Influence of substrate temperature on growth modes of copper phthalocyanine (CuPc) thin films at the dielectric/semiconductor interface in organic field effect transistors (OFETs) is investigated. Atomic force microscopy (AFM) imaging at the interface reveals a change from ‘layer+island’ to “island” growth mode with increasing substrate temperatures, further confirmed by probing the buried interfaces using X-ray reflectivity (XRR) and positron annihilation spectroscopic (PAS) techniques. PAS depth profiling provides insight into the details of molecular ordering while positron lifetime measurements reveal the difference in packing modes of CuPc molecules at the interface. XRR measurements show systematic increase in interface width and electron density correlating well with the change from layer + island to coalesced huge 3D islands at higher substrate temperatures. Study demonstrates the usefulness of XRR and PAS techniques to study growth modes at buried interfaces and reveals the influence of growth modes of semiconductor at the interface on hole and electron trap concentrations individually, thereby affecting hysteresis and threshold voltage stability. Minimum hole trapping is correlated to near layer by layer formation close to the interface at 100 °C and maximum to the island formation with large voids between the grains at 225 °C.

The room temperature chemiresistive response of n-type ZnO nanowire (ZnO NWs) films modified with different thicknesses of p-type cobalt phthalocyanine (CoPc) has been studied. With increasing thickness of CoPc (>15 nm), heterojunction films exhibit a transition from n- to p-type conduction due to uniform coating of CoPc on ZnO. The heterojunction films prepared with a 25 nm thick CoPc layer exhibit the highest response (268% at 10 ppm of H2S) and the fastest response (26 s) among all samples. The X-ray photoelectron spectroscopy and work function measurements reveal that electron transfer takes place from ZnO to CoPc, resulting in formation of a p–n junction with a barrier height of 0.4 eV and a depletion layer width of ∼8.9 nm. The detailed XPS analysis suggests that these heterojunction films with 25 nm thick CoPc exhibit the least content of chemisorbed oxygen, enabling the direct interaction of H2S with the CoPc molecule, and therefore exhibit the fastest response. The improved response is attributed to the high susceptibility of the p–n junctions to the H2S gas, which manipulates the depletion layer width and controls the charge transport.

Surface engineering of SiO2dielectric using different self-assembled monolayer (SAM) has been carried out, and its effect on the molecular packing and growth behavior of copper phthalocyanine (CuPc) has been studied. A correlation between the growth behavior and performance of organic field effect transistors is examined. Depth profiling using positron annihilation and X-ray reflectivity techniques has been employed to characterize the interface between CuPc and the modified and/or unmodified dielectric. We observe the presence of structural defects or disorder due to disorientation of CuPc molecules on the unmodified dielectric and ordered arrangement on the modified dielectrics, consistent with the high charge carrier mobility in organic field effect transistors in the latter. The study also highlights the sensitivity of these techniques to the packing of CuPc molecules on SiO2modified using different SAMs. Our study also signifies the sensitivity and utility of these two techniques in the characterization of buried interfaces in organic devices.

Polarized neutron reflectometry (PNR) is an ideal non-destructive tool for chemical and magnetic characterization of thin films and multilayers. We have installed a position sensitive detector-based polarized neutron reflectometer at Dhruva reactor, Trombay. In this paper we will discuss the results obtained from this instrument for two multilayer samples. The first sample is a (Ni-Mo alloy)/Ti multilayer sample. We have determined the chemical structure of this multilayer by unpolarized neutron reflectometry (NR). The other sample is a Fe/Ge multilayer sample for which we obtained the chemical structure by NR and magnetic moment per Fe atom by PNR.

X-ray and neutron reflectivity of thin gold films (few hundred Å) deposited on float glass has been measured. The X-ray reflectivity measurement has been done using Cu Kα radiation of 1.54 Å. Neutron reflectivity measurements have been done with 4.06 Å cold neutrons at Dhruva reactor, Trombay, India. The film thickness, density and root mean square roughness have been estimated by fitting the data, using dynamical theory of reflection for generating X-ray and neutron reflectivity profiles. Results of both the experiments compare well.

It is possible to obtain an increase in the flux of cold neutrons emerging from a nuclear reactor by remoderating the neutrons in a cold moderator. This paper evaluates the optimum height for a cylindrical liquid methane moderator (110 K) for the flux conditions in the DHRUVA reactor. Remoderated spectra emerging from cylindrical liquid methane moderator are calculated using a Monte Carlo technique for the height of the cylinder varying from 5 to 25 mm. The gain in flux quickly builds up with increase in height and nearly saturates beyond 20 mm. The effective temperature of the emerging spectrum is about 130 K. This calculation has been used to decide upon the height of the cylindrical cold source.