1. Research of Single-Event Burnout in 1.2-kV Rated CoolSiC Trench MOSFET
- Author
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Yu, Cheng-Hao, Bao, Meng-Tian, Wang, Ying, Guo, Hao-Min, Han, Yun-Cheng, and Hu, Hai-Fan
- Abstract
This paper presents the two-dimensional (2-D) numerical simulation results of heavy-ion induced reverse drain current degradation and single-event burnout (SEB) in the 1.2-kV rated CoolSiC Trench metal-oxide-semiconductor field-effect transistor (MOSFET). The physics models employed in simulations and critical failure conditions were validated by the heavy-ion irradiation experiments of the commercially available 1.2-kV rated SiC planar-gate MOSFET devices. The CoolSiC Trench MOSFET was proven to behave comparative SEB performance compared with the SiC planar-gate MOSFET. The robustness of the CoolSiC Trench MOSFET with different single buffer layer (SBL) designs against a heavy ion was simulated. Furthermore, the SBL-CoolSiC Trench MOSFET with low carrier lifetime control was investigated. According to the simulation results, the severe degeneration failure tolerance increased to 800 V; the SEB failure tolerance could reach 900 V.
- Published
- 2022
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